Mitsubishi Electric Corporation Semiconductor Group CM50TF-12H Datasheet
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
A
B
C
B
u
PEuPBvPEvPBwPEwP
P
EJ
D
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
H
having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (V
), 50 Ampere Six-
CES
IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 50 12
CES
S - DIA.
(2 TYP.)
G
P
(BuP)
GuP
(BuN)
GuN
N
N
N
P
EuP
u
EuN
uvw
uNEu
B
R
(BvP)
GvP
(BvN)
GvN
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.00 127.0
B 4.33±0.01 110.0±0.2
C 3.86 98.0
D 2.20 56.0
E 1.57 40.0
F 1.12 28.5
G 1.04 26.5
H 1.01 25.6
J 0.98 25.0
NBvNEvNBwNEwN
F F KM
R
L
TAB #250, t = 0.8
EvP
v
EvN
R
L
(BwP)
GwP
(BwN)
GwN
Dimensions Inches Millimeters
K 0.85 21.5
L 0.83 21.0
M 0.75 19.0
N 0.71 18.0
P 0.69 17.5
Q 0.65 16.5
R 0.30 7.5
S 0.22 Dia. Dia. 5.5
Q
TAB #110, t = 0.5
R
EwP
w
EwN
Sep.1998
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50TF-12H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 390 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to 150 °C
–40 to 125 °C
600 Volts
±20 Volts
50 Amperes
100* Amperes
50 Amperes
100* Amperes
250 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 50A, VGE = 15V – 2.1 2.8** Volts
IC = 50A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 300V, IC = 50A, VGE = 15V – 150 – nC
IE = 50A, VGE = 0V – – 2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 1.8 nF
VCC = 300V, IC = 50A, – – 300 ns
V
= V
GE1
= 15V, RG = 13Ω – – 200 ns
GE2
IE = 50A, diE/dt = –100A/µs – – 110 ns
IE = 50A, diE/dt = –100A/µs – 0.14 – µC
– – 5 nF
– – 1 nF
– – 200 ns
– – 300 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.042 °C/W
Per IGBT – – 0.50 °C/W
Per FWDi – – 1.00 °C/W
Sep.1998
Loading...