Mitsubishi Electric Corporation Semiconductor Group CM50DY-24H Datasheet
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULA TED TYPE
A
B
C
FF
M
D
E2C2E1
K
E2G1 G2
E1
C1
J
Q - DIA.
(2 TYP.)
(3 TYP.)
R
H
E
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.57 40.0
D 1.34 34.0
E 1.22 Max. 31.0 Max.
F 0.90 23.0
G 0.85 21.5
H 0.79 20.0
J 0.71 18.0
N
S - M5 THD
(3 TYP.)
R
L
E2
H
P
Dimensions Inches Millimeters
K 0.67 17.0
L 0.63 16.0
M 0.51 13.0
N 0.47 12.0
P 0.28 7.0
Q 0.256 Dia. Dia. 6.5
R 0.16 4.0
S M5 Metric M5
R
TAB#110 t=0.5
G
G2
E2
C1
E1
G1
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50DY-24H
is a 1200V (V
), 50 Ampere
CES
Dual IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 50 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50DY-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 190 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
50 Amperes
100* Amperes
50 Amperes
100* Amperes
400 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 50A, VGE = 15V – 2.5 3.4** Volts
IC = 50A, VGE = 15V , Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 50A, VGE = 15V – 250 – nC
IE = 50A, VGE = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t
d(on)
Load Rise Time t
Switching Turn-off Delay T ime t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 3.5 nF
VCC = 600V , IC = 50A, – – 200 ns
V
= V
GE1
= 15V , RG = 6.3Ω – – 150 ns
GE2
IE = 50A, diE/dt = –100A/µs – – 250 ns
IE = 50A, diE/dt = –100A/µs – 0.37 – µC
–– 10nF
– – 2 nF
– – 80 ns
– – 350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.075 °C/W
Per IGBT – – 0.31 °C/W
Per FWDi – – 0.70 °C/W
Sep.1998
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