MITSUBISHI AN-UHF-076-A User Manual

Silicon RF Power Semiconductors

SUBJECT: RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

SUMMARY:

APPLICATION NOTE

Document NO. AN-UHF-076-A
Date : 29
Rev. Date :22
Prepared : Y.Kosaka

Confirmed : S.Kametani
(Taking charge of Silicon RF by

This application note shows the RF characteristics (Frequency Characteristics and Pin vs. Pout

characteristics) data with RD00HVS1 using Broad-Band Fixture and a schematic for test fixture.

- Sample history:

RD00HVS1: Lot number “552”

- Evaluate conditions:

th

Jun. 2006

th

Jun. 2010

E.Akiyama

MIYOSHI Electronics)

@f=450MHz : Vdd=7.2V, Pin=5mW, Idq=0.05A (Vgg adj.)

@f=460MHz : Vdd=7.2V, Pin=5mW, Idq=0.05A (Vgg adj.)

@f=470MHz : Vdd=7.2V, Pin=5mW, Idq=0.05A (Vgg adj.)

- Results:

Page 2 shows the RF characteristics (Frequency characteristics) data.

Page 3-5 shows the RF characteristics (Pin vs. Pout characteristics) data.

Page 6 shows the Equivalent Circuit and schematic for test fixture.

Application Note for Silicon RF Power Semiconductors

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RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

RD00HVS1 Frequency Characteristics (@ f=450 - 470MHz)

- AN-UHF-075-A-

Vdd=7.2V,Idq=50mA
Pin=5mW

1

0.75

0.5

Pout(W)

0.25

0

430 440 450 460 470 480 490

RD00HVS1 Freq. Characteristics

Pout (W)

ηd (%)

f (MHz)

100

90

80

70

60

50

ηd(%)

40

30

20

10

0

Freq. Vgg Vdd Gp ID(RF) ηd (%)

(MHz) (V) (V) (dBm) (mW) (dBm) (W) (dB) (A) (%) (dB) (dBc) (dBc)

400 2.60 7.21 7.0 5.02 21.1 0.13 14.1 0.071 25.46 -0.09 -31.8 <-60
405 2.60 7.21 7.0 5.00 21.8 0.15 14.8 0.073 28.64 -0.10 -32.0 <-60
410 2.60 7.21 7.0 4.98 22.4 0.18 15.5 0.075 32.44 -0.12 -32.1 <-60
415 2.60 7.21 7.0 5.00 23.1 0.21 16.1 0.079 36.17 -0.13 -32.8 <-60
420 2.60 7.21 7.0 5.02 23.9 0.24 16.8 0.083 40.63 -0.20 -32.9 <-60
425 2.60 7.21 7.0 5.02 24.6 0.29 17.6 0.087 45.75 -0.30 -33.2 <-60
430 2.60 7.21 7.0 4.98 25.3 0.34 18.3 0.093 50.09 -0.46 -33.7 <-60
435 2.60 7.20 7.0 4.97 25.8 0.38 18.8 0.097 54.39 -0.75 -34.4 <-60
440 2.60 7.20 7.0 4.99 26.1 0.41 19.1 0.099 57.01 -1.19 -35.3 <-60
445 2.60 7.20 7.0 4.96 26.2 0.42 19.3 0.099 58.67 -1.79 -36.3 <-60
450 2.60 7.20 7.0 5.00 26.3 0.42 19.3 0.099 59.60 -2.55 -37.4 <-60
455 2.60 7.20 7.0 4.96 26.3 0.43 19.3 0.098 60.43 -3.47 -37.9 <-60
460 2.60 7.20 7.0 5.01 26.3 0.43 19.3 0.097 60.94 -4.58 -38.4 <-60
465 2.60 7.20 7.0 4.96 26.2 0.42 19.3 0.094 61.93 -5.78 -37.9 <-60
470 2.60 7.20 7.0 4.97 26.1 0.41 19.1 0.091 62.22 -6.71 -37.1 <-60
475 2.60 7.20 7.0 4.96 25.9 0.39 18.9 0.087 62.09 -6.94 -36.4 <-60
480 2.60 7.20 7.0 4.99 25.6 0.36 18.6 0.084 60.01 -6.49 -36.1 <-60
485 2.60 7.20 7.0 4.98 25.2 0.33 18.2 0.081 56.87 -5.87 -35.9 <-60
490 2.60 7.20 7.0 5.02 24.7 0.30 17.7 0.078 53.10 -5.31 -35.8 <-60
495 2.60 7.21 7.0 5.03 24.2 0.26 17.2 0.075 48.84 -4.88 -36.0 <-60
500 2.60 7.21 6.9 4.95 23.6 0.23 16.6 0.073 43.26 -4.52 -36.2 <-60

note: part of hatching show out of target

Vdd= 7.2 V Vgg= 2.65 V

Idq= 50.0 mA

Pin Pout

Retu rn Los s.

Application Note for Silicon RF Power Semiconductors

2fo 3fo

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RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

RD00HVS1 Pin vs. Pout characteristics (@ f=450MHz)

RD00HVS1 Pin vs. Po, Gain & ηd

(@f=450MHz,Vdd=7.2V)

- AN-UHF-075-A-

40

Po

35

30

25

, Gp(dB)

20

15

Po (dBm)

10

5

0

-10-5 0 5 1015

Gp

ηt

Pin ( d B m)

80

70

60

50

40

30

20

10

0

ηt(%)

PoPin

(dBm) (mW ) (dBm) (W) (V) (V) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)

-10.02 0.1 13.73 0.02 7.22 2.651 0.052 6.31 23.76 -1.20 -42.30 <-60

-7.98 0.2 15.70 0.04 7.22 2.650 0.053 9.73 23.67 -1.22 -41.12 <-60

-6.04 0.2 17.54 0.06 7.22 2.651 0.055 14.35 23.58 -1.23 -40.34 <-60

-4.02 0.4 19.39 0.09 7.22 2.651 0.058 20.82 23.41 -1.25 -38.89 <-60

-1.98 0.6 21.18 0.13 7.21 2.651 0.063 28.93 23.16 -1.29 -36.86 <-60

0.02 1.0 22.87 0.19 7.21 2.650 0.070 38.40 22.85 -1.37 -35.80 <-60

2.00 1.6 24.49 0.28 7.21 2.651 0.080 48.80 22.48 -1.50 -34.59 <-60

4.01 2.5 25.77 0.38 7.21 2.652 0.091 57.62 21.76 -1.68 -35.31 <-60

6.03 4.0 26.35 0.43 7.21 2.651 0.099 60.55 20.32 -1.68 -356.97 <-60

8.01 6.3 26.68 0.47 7.21 2.651 0.105 61.53 18.66 -1.50 -39.49 -54.86

10.04 10.1 26.93 0.49 7.21 2.651 0.110 62.23 16.89 -1.29 -43.28 -53.96

12.00 15.9 27.15 0.52 7.21 2.652 0.116 62.05 15.14 -1.08 -47.82 -51.57

14.01 25.2 27.37 0.55 7.21 2.652 0.122 62.10 13.36 -0.86 -42.03 -50.86
Vdd= 7.20 (V) Vgg= 2.650 (V)

Idq= 50 (mA)

f=

450

(MHz)

Vdd Vgg Idd ηd Gain R.L. Harmonics Harmonics

Application Note for Silicon RF Power Semiconductors

3/6

RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

RD00HVS1 Pin vs. Pout characteristics (@ f=460MHz)

RD00HVS1 Pin vs. Po, Gain & ηd

(@f=460MHz,Vdd=7.2V)

40

35

30

Po

Gp

ηt

- AN-UHF-075-A-

80

70

60

25

, Gp(dB)

20

15

Po (dBm)

10

5

0

-10-5 0 5 1015

Pin ( d B m)

50

40

30

20

10

0

ηt(%)

Pin Po

(dBm) (mW ) (dBm) (W) (V) (V) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)

-10.03 0.1 14.03 0.03 7.22 2.649 0.052 6.76 24.07 -3.48 -41.35 <-60

-7.98 0.2 16.03 0.04 7.22 2.650 0.053 10.50 24.01 -3.52 -41.55 <-60

-5.98 0.3 17.95 0.06 7.22 2.650 0.055 15.75 23.93 -3.54 -40.52 <-60

-3.99 0.4 19.79 0.10 7.21 2.649 0.058 22.83 23.78 -3.57 -39.56 <-60

-2.02 0.6 21.54 0.14 7.21 2.649 0.063 31.44 23.56 -3.63 -37.87 <-60

0.00 1.0 23.26 0.21 7.21 2.650 0.071 41.47 23.26 -3.75 -36.13 <-60

2.00 1.6 24.82 0.30 7.21 2.649 0.080 52.70 22.82 -4.01 -35.31 <-60

4.05 2.5 25.85 0.39 7.21 2.648 0.090 59.42 21.81 -4.12 -35.96 <-60

5.97 4.0 26.34 0.43 7.21 2.649 0.096 62.23 20.36 -3.78 -37.79 -54.12

8.00 6.3 26.67 0.46 7.21 2.649 0.101 63.85 18.67 -3.17 -39.82 -56.04

10.00 10.0 26.94 0.49 7.21 2.649 0.107 64.21 16.95 -2.57 -40.56 -53.65

12.02 15.9 27.21 0.53 7.21 2.649 0.113 64.70 15.19 -2.05 -38.72 -51.53

14.03 25.3 27.49 0.56 7.21 2.649 0.120 65.01 13.47 -1.66 -35.89 -50.81
Vdd= 7.20 (V) Vgg= 2.650 (V)

Idq= 50 (mA)

f=

460

(MHz)

Vdd Vgg Idd ηd Gain R.L. Harmonics Harmonics

Application Note for Silicon RF Power Semiconductors

4/6

RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

RD00HVS1 Pin vs. Pout characteristics (@ f=470MHz)

RD00HVS1 Pin vs. Po, Gain & ηd

(@f=470MHz,Vdd=7.2V)

- AN-UHF-075-A-

40

Po

35

30

25

, Gp(dB)

20

15

Po (dBm)

10

5

0

-10-5 0 5 1015

Gp

ηt

Pin ( d B m)

80

70

60

50

40

30

20

10

0

ηt(%)

Pin Po

(dBm) (mW ) (dBm) (W) (V) (V) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)

-10.01 0.1 14.12 0.03 7.22 2.649 0.052 6.89 24.12 -3.47 -42.26 <-60

-7.98 0.2 16.06 0.04 7.22 2.649 0.053 10.57 24.04 -3.50 -42.49 <-60

-5.97 0.3 17.98 0.06 7.22 2.650 0.055 15.86 23.95 -3.43 -39.82 <-60

-3.98 0.4 19.81 0.10 7.22 2.649 0.058 22.91 23.79 -3.56 -28.56 <-60

-1.98 0.6 21.58 0.14 7.21 2.649 0.063 31.75 23.57 -3.62 -37.31 <-60

0.02 1.0 23.28 0.21 7.21 2.650 0.070 42.25 23.27 -3.75 -35.96 <-60

2.01 1.6 24.84 0.30 7.21 2.649 0.081 52.23 22.82 -3.99 -35.97 <-60

4.03 2.5 25.85 0.38 7.21 2.650 0.090 59.35 21.82 -4.11 -37.69 <-60

6.04 4.0 26.34 0.43 7.21 2.649 0.096 62.33 20.30 -3.76 -38.09 <-60

8.03 6.4 26.67 0.46 7.21 2.650 0.102 63.25 18.64 -3.15 -39.75 -54.25

9.98 10.0 26.94 0.49 7.21 2.650 0.107 64.10 16.96 -2.57 -40.64 -53.69

12.04 16.0 27.21 0.53 7.21 2.649 0.113 64.69 15.18 -2.05 -38.69 -51.37

14.04 25.3 27.49 0.56 7.21 2.650 0.120 64.93 13.45 -1.67 -35.60 -51.26
Vdd= 7.20 (V) Vgg= 2.650 (V)

Idq= 50 (mA)

f=

470

(MHz)

Vdd Vgg Idd ηd Gain R.L. Harmonics Harmonics

Application Note for Silicon RF Power Semiconductors

5/6

RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

- AN-UHF-075-A-

RD00HVS1 Equivalent Circuit (@f=450-470MHz)

Vgg

C10

19mm

RD00HVS1

450-470MHz

5.0mm

RF-i n

R1

2.25mm

C1

Parts Number Capacity ty pe name

C10 0.022µF GRM216R11H223KA01E
C11 0.022µF GRM216R11H223KA01E
C12 22µF A0603

5.35mm

C2

C1 68pF GRM2162C1H680GD01E
C2 15pF GRM2162C1H150GD01E
C3 10pF GRM2162C1H100FD01E
C4 4pF GRM2162C1H4R0CD01E
C5 10pF GRM2162C1H100FD01E
C6 11pF GRM2162C1H110GD01E
C7 5pF GRM2162C1H5R0CD01E
C8 10pF GRM2162C1H100FD01E
C9 68pF GRM2162C1H680GD01E

R1 4.7K OHM CR1/10-472JB

L1

L2

9.5mm

12.2mm3.3mm

C3

C4

Note:Board material- Glass epoxy copper-clad laminates FR-4(90 mm * 40 mm)

(Enameled wire 4Turns, D iameter:0.43mm,

φ2.46mm (the out side diam eter))

(Enameled wire 4Turns, D iameter:0.43mm,

φ1.66mm (the out side diam eter))

2.7mm

C5

Micro strip line width=1mm, er:4.8, t=0.6mm

34.5nH

10.8nH

2.3mm

C6

16mm

7.6mm

4005A

4804A

Vdd

C11

L1

2.1mm

C12

4.55mm

L2

13.75mm

C7

corporation

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.

NICHICON CORPORATION

Hokuriku Electric Industry Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

7.1mm

C9

C8

2.25mm
RF-out

RD00HVS1 test fixture (@f=450-470MHz)

Vgg

RF input

Vdd

RF output

Application Note for Silicon RF Power Semiconductors

6/6