MITSUBISHI AN-UHF-076-A User Manual

Silicon RF Power Semiconductors

SUBJECT: RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

SUMMARY:

APPLICATION NOTE

Document NO. AN-UHF-076-A
Date : 29
Rev. Date :22
Prepared : Y.Kosaka

Confirmed : S.Kametani
(Taking charge of Silicon RF by

This application note shows the RF characteristics (Frequency Characteristics and Pin vs. Pout

characteristics) data with RD00HVS1 using Broad-Band Fixture and a schematic for test fixture.

- Sample history:

RD00HVS1: Lot number “552”

- Evaluate conditions:

th

Jun. 2006

th

Jun. 2010

E.Akiyama

MIYOSHI Electronics)

@f=450MHz : Vdd=7.2V, Pin=5mW, Idq=0.05A (Vgg adj.)

@f=460MHz : Vdd=7.2V, Pin=5mW, Idq=0.05A (Vgg adj.)

@f=470MHz : Vdd=7.2V, Pin=5mW, Idq=0.05A (Vgg adj.)

- Results:

Page 2 shows the RF characteristics (Frequency characteristics) data.

Page 3-5 shows the RF characteristics (Pin vs. Pout characteristics) data.

Page 6 shows the Equivalent Circuit and schematic for test fixture.

Application Note for Silicon RF Power Semiconductors

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RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

RD00HVS1 Frequency Characteristics (@ f=450 - 470MHz)

- AN-UHF-075-A-

Vdd=7.2V,Idq=50mA
Pin=5mW

1

0.75

0.5

Pout(W)

0.25

0

430 440 450 460 470 480 490

RD00HVS1 Freq. Characteristics

Pout (W)

ηd (%)

f (MHz)

100

90

80

70

60

50

ηd(%)

40

30

20

10

0

Freq. Vgg Vdd Gp ID(RF) ηd (%)

(MHz) (V) (V) (dBm) (mW) (dBm) (W) (dB) (A) (%) (dB) (dBc) (dBc)

400 2.60 7.21 7.0 5.02 21.1 0.13 14.1 0.071 25.46 -0.09 -31.8 <-60
405 2.60 7.21 7.0 5.00 21.8 0.15 14.8 0.073 28.64 -0.10 -32.0 <-60
410 2.60 7.21 7.0 4.98 22.4 0.18 15.5 0.075 32.44 -0.12 -32.1 <-60
415 2.60 7.21 7.0 5.00 23.1 0.21 16.1 0.079 36.17 -0.13 -32.8 <-60
420 2.60 7.21 7.0 5.02 23.9 0.24 16.8 0.083 40.63 -0.20 -32.9 <-60
425 2.60 7.21 7.0 5.02 24.6 0.29 17.6 0.087 45.75 -0.30 -33.2 <-60
430 2.60 7.21 7.0 4.98 25.3 0.34 18.3 0.093 50.09 -0.46 -33.7 <-60
435 2.60 7.20 7.0 4.97 25.8 0.38 18.8 0.097 54.39 -0.75 -34.4 <-60
440 2.60 7.20 7.0 4.99 26.1 0.41 19.1 0.099 57.01 -1.19 -35.3 <-60
445 2.60 7.20 7.0 4.96 26.2 0.42 19.3 0.099 58.67 -1.79 -36.3 <-60
450 2.60 7.20 7.0 5.00 26.3 0.42 19.3 0.099 59.60 -2.55 -37.4 <-60
455 2.60 7.20 7.0 4.96 26.3 0.43 19.3 0.098 60.43 -3.47 -37.9 <-60
460 2.60 7.20 7.0 5.01 26.3 0.43 19.3 0.097 60.94 -4.58 -38.4 <-60
465 2.60 7.20 7.0 4.96 26.2 0.42 19.3 0.094 61.93 -5.78 -37.9 <-60
470 2.60 7.20 7.0 4.97 26.1 0.41 19.1 0.091 62.22 -6.71 -37.1 <-60
475 2.60 7.20 7.0 4.96 25.9 0.39 18.9 0.087 62.09 -6.94 -36.4 <-60
480 2.60 7.20 7.0 4.99 25.6 0.36 18.6 0.084 60.01 -6.49 -36.1 <-60
485 2.60 7.20 7.0 4.98 25.2 0.33 18.2 0.081 56.87 -5.87 -35.9 <-60
490 2.60 7.20 7.0 5.02 24.7 0.30 17.7 0.078 53.10 -5.31 -35.8 <-60
495 2.60 7.21 7.0 5.03 24.2 0.26 17.2 0.075 48.84 -4.88 -36.0 <-60
500 2.60 7.21 6.9 4.95 23.6 0.23 16.6 0.073 43.26 -4.52 -36.2 <-60

note: part of hatching show out of target

Vdd= 7.2 V Vgg= 2.65 V

Idq= 50.0 mA

Pin Pout

Retu rn Los s.

Application Note for Silicon RF Power Semiconductors

2fo 3fo

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