Microsemi Corporation SG2003L, SG2003N, SG2004J, SG2004L, SG2011J Datasheet

SG2000 SERIES

4/90 Rev 1.3 6/97 LINFINITY Microelectronics Inc.

Copyright  1997 11861 Western Avenue

∞ ∞

∞ ∞

∞ Garden Grove, CA 92841

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DESCRIPTION

The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from

-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.

FEATURES

••

••

• Seven npn Darlington pairs

••

••

• -55°C to 125°C ambient operating temperature range

••

••

• Collector currents to 600mA

••

••

• Output voltages from 50V to 95V

••

••

• Internal clamping diodes for inductive loads

••

••

• DTL, TTL, PMOS, or CMOS compatible inputs

••

••

• Hermetic ceramic package

HIGH RELIABILITY FEATURES

♦♦

♦♦

♦ Available to MIL-STD-883 and DESC SMD
♦♦

♦♦

♦ MIL-M38510/14101BEA - JAN2001J
♦♦

♦♦

♦ MIL-M38510/14102BEA - JAN2002J
♦♦

♦♦

♦ MIL-M38510/14103BEA - JAN2003J
♦♦

♦♦

♦ MIL-M38510/14104BEA - JAN2004J
♦♦

♦♦

♦ Radiation data available
♦♦

♦♦

♦ LMI level "S" processing available

HIGH VOL TAGE MEDIUM

CURRENT DRIVER ARRAYS

PARTIAL SCHEMATICS

SG2000 SERIES

4/90 Rev 1.3 6/97 LINFINITY Microelectronics Inc.

Copyright  1997 11861 Western Avenue

∞ ∞

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∞ Garden Grove, CA 92841

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ABSOLUTE MAXIMUM RATINGS (Note 1)

Peak Collector Current, I

C

(SG2000, 2020) ......................................................

(SG2010) ................................................................

Operating Junction Temperature

Hermetic (J, L Packages) .........................................

Plastic (N, Packages) ...............................................

Storage Temperature Range ..........................

Lead Temperature (Soldering 10 sec.) .........................

Output Voltage, V

CE

(SG2000, 2010 series) ................................................

(SG2020 series) ..........................................................

Input Voltage, V

IN

(SG2002,3,4) ...............................................................

Continuous Input Current, I

IN

........................................

50V
95V

30V

25mA

500mA
600mA

150°C
150°C

-65°C to 150°C
300°C

Note 1. Values beyond which damage may occur.

J Package:

Thermal Resistance-

Junction to Case, θ

JC

.................. 30°C/W

Thermal Resistance-

Junction to Ambient, θ

JA

............... 80°C/W

N Package:

Thermal Resistance-

Junction to Case, θ

JC

.................. 40°C/W

Thermal Resistance-

Junction to Ambient, θ

JA

.............. 65°C/W

L Package:

Thermal Resistance-

Junction to Case, θ

JC

.................. 35°C/W

Thermal Resistance-

Junction to Ambient, θ

JA

............ 120°C/W

THERMAL DATA

Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers for θJC are maximums for the limiting thermal

resistance of the package in a standard mounting configuration.
The θ

JA

numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.

Output Voltage, V

CE

SG2000, SG2010 series ..............................................

SG2020 series .............................................................

50V
95V

Peak Collector Current, I

C

SG2000, SG2020 series ...........................................

SG2010 series ........................................................

Operating Ambient Temperature Range

SG2000 Series - Hermetic ..........................

SG2000 Series - Plastic ..................................

50mA

500mA

-55°C to 125°C
0°C to 70°C

RECOMMENDED OPERATING CONDITIONS (Note 2)

Note 2. Range over which the device is functional.

SELECTION GUIDE

Device VCE Max IC Max Logic Inputs

SG2001 50V 500mA General Purpose

PMOS, CMOS
SG2002 50V 500mA 14V-25V PMOS
SG2003 50V 500mA 5V TTL, CMOS
SG2004 50V 500mA 6V-15V CMOS, PMOS
SG2011 50V 600mA General Purpose

PMOS, CMOS
SG2012 50V 600mA 14V-25V PMOS

Device VCE Max IC Max Logic Inputs

SG2013 50V 600mA 5V TTL, CMOS
SG2014 50V 600mA 6V-15V CMOS, PMOS
SG2015 50V 600mA High Output TTL
SG2021 95V 500mA General Purpose

PMOS, CMOS
SG2023 95V 500mA 5V TTL, CMOS
SG2024 95V 500mA 6V-15V CMOS, PMOS

SG2000 SERIES

4/90 Rev 1.3 6/97 LINFINITY Microelectronics Inc.

Copyright  1997 11861 Western Avenue

∞ ∞

∞ ∞

∞ Garden Grove, CA 92841

3 [phone]

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ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55°C ≤ TA ≤ 125°C
and SG2000 series - Plastic - with 0°C ≤ T

A

≤ 70°C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal

to the ambient temperature.)

Parameter Units

Min. Typ. Max.

Limits

Test Conditions

All
SG2002
SG2004

All

SG2002
SG2003
SG2004

All
SG2002

SG2003

SG2004

SG2001

All

All

All

All

All

Applicable

Devices

Temp.

SG2001 thru SG2004

Output Leakage Current (I

CEX

)

Collector - Emitter (V

CE(SAT)

)

Input Current (I

IN(ON)

)

(I

IN(OFF)

)

Input Voltage (V

IN(ON)

)

D-C Forward Current

Transfer Ratio (h

FE

)

Input Capacitance (C

IN

) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (I

R

)

Clamp Diode Forward Voltage (V

F

)

T

A

= T

MIN

TA = T

MIN

TA = T

MIN

TA = 25°C
T

A

= 25°C

T

A

= 25°C

T

A

= T

MAX

TA = T

MAX

TA = T

MAX

TA = T

MAX

TA = T

MIN

TA = T

MAX

TA = T

MIN

TA = T

MIN

TA = T

MIN

TA = T

MAX

TA = T

MAX

TA = T

MAX

TA = T

MIN

TA = T

MIN

TA = T

MIN

TA = T

MIN

TA = T

MAX

TA = T

MAX

TA = T

MAX

TA = T

MAX

TA = T

MIN

TA = 25°C
T

A

= 25°C

T

A

= 25°C

T

A

= 25°C

V

CE

= 50V

V

CE

= 50V, VIN = 6V

V

CE

= 50V, VIN = 1V

I

C

= 350mA, IB = 850µA

I

C

= 200mA, IB = 550µA

I

C

= 100mA, IB = 350µA

I

C

= 350mA, IB = 500µA

I

C

= 200mA, IB = 350µA

I

C

= 100mA, IB = 250µA

I

C

= 350mA, IB = 500µA

I

C

= 200mA, IB = 350µA

I

C

= 100mA, IB = 250µA

V

IN

= 17V

V

IN

= 3.85V

V

IN

= 5V

V

IN

= 12V

I

C

= 500µA

V

CE

= 2V, IC = 300mA

V

CE

= 2V, IC = 300mA

V

CE

= 2V, IC = 200mA

V

CE

= 2V, IC = 250mA

V

CE

= 2V, IC = 300mA

V

CE

= 2V, IC = 200mA

V

CE

= 2V, IC = 250mA

V

CE

= 2V, IC = 300mA

V

CE

= 2V, IC = 125mA

V

CE

= 2V, IC = 200mA

V

CE

= 2V, IC = 275mA

V

CE

= 2V, IC = 350mA

V

CE

= 2V, IC = 125mA

V

CE

= 2V, IC = 200mA

V

CE

= 2V, IC = 275mA

V

CE

= 2V, IC = 350mA

V

CE

= 2V, IC = 350mA

V

CE

= 2V, IC = 350mA

0.5 E

IN

to 0.5 E

OUT

0.5 EIN to 0.5 E

OUT

VR = 50V
I

F

= 350mA

480
650
240
650

25

500

1000

1.6

1.3

1.1

1.25

1.1

0.9

1.6

1.3

1.1
850
930
350

1000

50

15
250
250

1.7

100
500
500

1.8

1.5

1.3

1.6

1.3

1.1

1.8

1.5

1.3
1300
1350

500

1450

18
13

3.3

3.6

3.9

2.4

2.7

3.0

6.0

8.0

10
12

5.0

6.0

7.0

8.0

25
1000
1000

50

2.0

µA
µA
µA

V
V
V
V
V
V
V
V
V

µA
µA
µA
µA
µA

V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

pF
ns
ns
µA

V

Note 3. These parameters, although guaranteed, are not tested in production.