MCC BC557C, BC558B, BC558, BC556, BC557A Datasheet

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MCC BC557C, BC558B, BC558, BC556, BC557A Datasheet

M C C

omponents 21201 Itasca Street Chatsworth

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Features

Through Hole Package

150oC Junction Temperature

Pin Configuration

 

Bottom View

C B E

Mechanical Data

Case: TO-92, Molded Plastic

Polarity: indicated as above.

Maximum Ratings @ 25oC Unless Otherwise Specified

Charateristic

 

Symbol

 

Value

 

Unit

 

 

 

 

 

Collector-Emitter Voltage

BC556

 

 

-65

 

 

 

 

BC557

VCEO

 

-45

 

V

 

 

BC558

 

 

-30

 

 

 

Collector-Base Voltage

BC556

 

 

-80

 

 

 

 

BC557

VCBO

 

-50

 

V

 

 

BC558

 

 

-30

 

 

 

Emitter-Base Voltage

 

VEBO

 

-5.0

 

V

 

Collector Current(DC)

 

IC

 

-100

 

mA

 

Power Dissipation@T =25oC

P

 

625

 

mW

 

 

5.0

 

mW/oC

 

A

 

d

 

 

 

Power Dissipation@T =25oC

P

 

1.5

 

W

 

 

 

 

 

 

C

 

d

 

12

 

mW/oC

 

 

 

 

 

 

Thermal Resistance, Junction to

Rq

 

200

 

o

 

 

 

 

 

 

Ambient Air

 

JA

 

 

 

C/W

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to

RqJC

 

83.3

 

oC/W

 

Case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating & Storage Temperature

T, T

 

-55~150

 

oC

 

 

 

j STG

 

 

 

 

 

BC556,B

BC557,A,B,C

BC558,B

PNP Silicon

Amplifier Transistor

625mW

TO-92

A

E

B

C

D

G

DIMENSIONS

 

INCHES

 

MM

 

 

DIM

MIN

MAX

MIN

MAX

NOTE

A

.175

.185

4.45

4.70

 

B

.175

.185

4.46

4.70

 

C

.500

---

12.7

---

 

D

.016

.020

0.41

0.63

 

E

.135

.145

3.43

3.68

 

G

.095

.105

2.42

2.67

 

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BC556 thru BC558B

M C C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage

 

V(BR)CEO

 

 

 

V

(IC = ±2.0 mAdc, IB = 0)

BC556

 

±65

Ð

Ð

 

 

BC557

 

±45

Ð

Ð

 

 

BC558

 

±30

Ð

Ð

 

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

 

V(BR)CBO

 

 

 

V

(IC = ±100 μAdc)

BC556

 

±80

Ð

Ð

 

 

BC557

 

±50

Ð

Ð

 

 

BC558

 

±30

Ð

Ð

 

 

 

 

 

 

 

 

Emitter± Base Breakdown Voltage

 

V(BR)EBO

±5.0

Ð

Ð

V

(IE = ±100 mAdc, IC = 0)

BC556

 

 

 

BC557

 

±5.0

Ð

Ð

 

 

BC558

 

±5.0

Ð

Ð

 

 

 

 

 

 

 

 

ON CHARACTERISTICS

DC Current Gain

 

hFE

 

 

 

Ð

(IC = ±10 μAdc, VCE = ±5.0 V)

BC557A

 

Ð

90

Ð

 

 

BC556B/557B/558B

 

Ð

150

Ð

 

 

BC557C

 

Ð

270

Ð

 

(IC = ±2.0 mAdc, VCE = ±5.0 V)

BC556

 

120

Ð

500

 

 

BC557

 

120

Ð

800

 

 

BC558

 

120

Ð

800

 

 

BC557A

 

120

170

220

 

 

BC556B/557B/558B

 

180

290

460

 

 

BC557C

 

420

500

800

 

(IC = ±100 mAdc, VCE = ±5.0 V)

BC557A

 

Ð

120

Ð

 

 

BC556B/557B/558B

 

Ð

180

Ð

 

 

BC557C

 

Ð

300

Ð

 

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

 

 

 

V

(IC = ±100mAdc, IB = ±5.0 mAdc)

 

 

Ð

---

±0.3

 

Base ± Emitter Saturation Voltage

 

VBE(sat)

 

 

 

V

(IC = ±100 mAdc, IB = ±5.0mAdc)

 

 

Ð

Ð

–1.0

 

Base±Emitter On Voltage

 

VBE(on)

 

 

 

V

(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)

 

 

±0.55

±0.62

±0.7

 

(IC = ±10 mAdc, VCE = ±5.0 Vdc)

 

 

Ð

±0.7

±0.82

 

SMALL±SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

 

 

 

MHz

(IC = ±10 mA, VCE = ±5.0 V, f = 100 MHz)

BC556

 

Ð

280

Ð

 

 

BC557

 

Ð

320

Ð

 

 

BC558

 

Ð

360

Ð

 

 

 

 

 

 

 

 

Output Capacitance

 

Cob

Ð

3.0

6.0

pF

(VCB = ±10 V, IC = 0, f = 1.0 MHz)

 

 

 

 

 

 

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