MCC 1N5399GP, 1N5398GP, 1N5397GP, 1N5395GP, 1N5393GP Datasheet

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MCC 1N5399GP, 1N5398GP, 1N5397GP, 1N5395GP, 1N5393GP Datasheet

M C C

omponents 21201 Itasca Street Chatsworth

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Features

Low Current Leakage

Low Forward Voltage

High Current Capability

Low Cost

Glass Passivated Junction

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Typical Thermal Resistance; 45°C/W Junction To Ambient

Microsemi

Device

Maximum

Maximum

Maximum

Catalog

Marking

Recurrent

RMS

DC

Number

 

Peak

Voltage

Blocking

 

 

Reverse

 

Voltage

 

 

Voltage

 

 

1N5391GP

---

50V

35V

50V

1N5392GP

---

100V

70V

100V

1N5393GP

---

200V

140V

200V

1N5394GP

---

300V

210V

300V

1N5395GP

---

400V

280V

400V

1N5396GP

---

500V

350V

500V

1N5397GP

---

600V

420V

600V

1N5398GP

---

800V

560V

800V

1N5399GP

---

1000V

700V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

IF(AV)

1.5A

TA = 70°C

Current

 

 

 

Peak Forward Surge

IFSM

50A

8.3ms, half sine

Current

 

 

 

Maximum

 

1.4V

IFM = 1.5A;

Instantaneous

VF

Forward Voltage

 

 

°

 

 

 

TJ = 25 C*

Maximum DC

 

 

 

Reverse Current At

IR

5.0μA

TA = 25°C

Rated DC Blocking

 

μ

°

Voltage

 

300 A

TA = 100 C

 

 

 

Typical Junction

CJ

15pF

Measured at

Capacitance

 

 

1.0MHz, VR=4.0V

*Pulse test: Pulse width 300 μsec, Duty cycle 1%

1N5391GP THRU 1N5399GP

1.5 Amp Glass

Passivated Rectifier

50 - 1000 Volts

DO-15

D

A

Cathode

Mark

B

D

C

DIMENSIONS

 

INCHES

 

MM

 

 

DIM

MIN

MAX

MIN

MAX

NOTE

A

.230

.300

5.80

7.60

 

B

.104

.140

2.60

3.60

 

C

.026

.034

.70

.90

 

D

1.000

---

25.40

---

 

www.mccsemi.com

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