LITEON SMBJ110, SMBJ11, SMBJ100A, SMBJ10, SMBJ100CA Datasheet

LITE-ON

SEMICONDUCTOR

SMBJ SERIES

SURFACE MOUNT

UNIDIRECTIONAL AND BIDIRECTIONAL

TRANSIENT VOLTAGE SUPPRESSORS

FEATURES

Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic

technique
Plastic material has UL flammability classification

94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ps for

Uni-direction,less than 5.0ns for Bi-direction,form 0
Volts to BV min

MECHANICAL DATA

Case : Molded plastic
Polarity : by cathode band denotes uni-directional

device none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram

STAND-OFF VOLTAGE­ POWER DISSIPATION -

SMB

A

B

G

H

E

C

D

F

DIM. MIN. MAX.
A
B
C
D
E
F
G
H

All Dimensions in millimeter

5.0 to 170
600

WATTS

SMB

4.06 4.57

1.96

5.21 5.59

0.05 0.20

2.01 2.62

0.76 1.52

Volts

3.94 3.30

2.21

0.31 0.15

MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te current by 2 0%

CHARACTERISTICS

PEAK POWER DISSIPATION AT T
T

= 1ms (Note 1,2)

P

Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)

Steady State Power Dissipation at T

Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)

Operating Temperature Range

Storage Temperature Range

(JEDEC METHOD)

= 25 C,

A

=75 C

L

SYMBOLS VALUE

PK

P

FSM

I

M(AV)

P

F

V

J

T

STG

T

UNIT

Minimum 600

100

5.0

SEE NOTE 4 Volts

-55 to +150

-55 to +175 C

WATTS

AMPS.

WATTS

C

NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above TA= 25 C per fig.1.

2. Thermal Resistance junction to Lead

3. 8.3ms sin gle half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).

F

4. V

= 3.5V on SMBJ5.0 thru SMBJ90A devices and VF= 5.0V on SMBJ100 thru SMBJ170A devices.

REV. 2, 01-Dec-2000, KSIB02

RATING AND CHARACTERISTIC CURVES
SMBJ SERIES

FIG.1 - PULSE DE RATING CURV E

100

75

50

25

10 X 1000 WAVEFORM
AS DEFINED BY R.E.A.

0

PEAK PULSE DERATING IN % OFPEAK

POWER OR C URRE N T

25 75 100

0

50

AMBIENT TEMPERATURE,

125 150

℃

175

200

FIG.3 - PULSE WAVEFORM

TR=10us

100

Peak value (I

50

TP

PEAK PULSE CURRENT , (% )

P,

I

0

0

TJ=25 C

1.0

RSM)

Half value=

T , TIME ( ms )

I

RSM

2

Pulse width (TP) is defined

as that point where the
peak current decays to

50% of I

RSM

10 x 1000 waveform as

defined by R.E.A.

2.0 3.0 4.0

FIG.2 - MAXIMUM NON-REPETI TIVE SURGE CURRENT

120

100

80

60

40

Pulse Width 8.3ms

20

Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1

2

510

20

NUMBER OF CY CLES AT 60Hz

FIG.4 - TYPICAL JUNCTION CAPACITANCE

10000

Uni-dire ctional

1000

Bi-directional

100

CAPACITANCE , (pF)

10

1

10

STAND-OFF VOLTAGE, VOLTS

TJ= 25 C

100

50 100

1000

100

)

W

, PEAK POWER ( K

P

P

10

1.0

0.1

0.1us

FIG.5 - PULSE RATING CURVE

TA=25 C

NON-REPETITI VE
PULSE WAVEFORM
SHOWN IN FIG 3.

5.0mm LEAD AREAS

1.0us 10us 100us 1.0ms 10ms

TP, PULSE WIDTH

STEADY STATE POWER DISSIPATION (W)

(AV)

PM

FIG.6 - STEADY STATE POWER DERATING CURVE

5.0

4.0

3.0

2.0

1.0

0.0

60Hz RESISTIVE OR
INDUCTIVE LOAD

0

25 75 100 125 150

50

TL,LEAD TEMPERATURE

REV. 2, 01-Dec-2000, KSIB02

175 200