LG GM76C8128CLL-70, GM76C8128CLL-55, GM76C8128CLLE-55, GM76C8128CLL-85, GM76C8128CLLI-85 Datasheet

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GM76C8128CL/CLL
131,072 WORDS x 8 BIT
CMOS STATIC RAM
Description
Features
* Fast Speed : 55/70/85ns * Low Power Standby and Low Power Operation Standby : 0.275mW Max. at TA = - 40 ~ 85C(LLE/LLI)
0.55mW Max. at TA = - 40 ~ 85C(LE/LI)
0.11mW Max. at TA = 0 ~ 70C(LL)
0.55mW Max. at TA = 0 ~ 70C(L) Operation : 385mW (Max) * Completely Static RAM : No Clock or Timing Strobe Required * Equal Access and Cycle Time * TTL compatible inputs and outputs * Capability of Battery Back-up Operation * Single + 5V+/-10% Operation * Standard 32 DIP, SOP and TSOP-I,STSOP-I * Temperature Range Commercial(0¡-70C) : GM76C8128C Extended (-25 ~ 85C) : GM76C8128C-E Industrial (-40 ~ 85C) : GM76C8128C-I
The GM76C8128CL/CLL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6um advanced CMOS technology and it provides high speed operation with minimum cycle time of 55/70/85ns. The device is placed in a low power standby mode with /CS1 high or CS2 low and the output enable (/OE) allows fast memory access. Thus it is suitable for high speed and low power applications, especially where battery back-up is required.
85
Pin Description
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Pin Function
A0-A16 Address Inputs
I/O0-I/O7 VCC VSS
Write Enable Input Chip Select Input Output Enable Input Data Inputs/Outputs Power Supply (4.5V ~5.5V) Ground
NC No Connection
/WE /CS1, CS2 /OE
Pin Configuration
(Top View)
A7 A6 A5 A4 A3 A2 A1 A0
VCC A15 CS2 /WE A13 A8 A9 A11 /OE A10 /CS1 I/O7
1
2 3
4 5 6
7 8
9 10 11
12 21
22
23
24
25
26
27
28
29
30
31
32
I/O0 I/O1
I/O6 I/O5
13
14 19
20
I/O2
VSS
I/O4 I/O3
15
16 17
18
NC A16 A14 A12
Block Diagram
MEMORY CELL ARRAY
1024 x 128 x 8
(128K x 8)
Column Select
I/O Buffer
Address
Buffer
X
Decoder
10
1024
7
128
128 x 8
8
Y
Decorder
/CS1, CS2
A0 A1 A2
A14 A15 A16
/CS1
/OE
. . . . . . . .
Chip Control
/OE, /WE Chip
Control
/WE
CS2
LG Semicon Co.,Ltd.
GM76C8128CL/CLL
86
Absolute Maximum Ratings*
*: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indi­ cated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions (TA = - 40 ~ 85C)
Truth Table
*Note: X means don't care
/CS1
L L L
CS2
H H H
/OE
L X H
A0 to A16
Stable Stable Stable
DATA I/O
Output Data
Input Data
Hi-Z
MODE
Read
Write
Output Disable
H X X - Hi-Z
Standby
X L X - Hi-Z
/WE
H L H X X
Symbol Parameter Unit
VCC VIH VIL
Supply Voltage Input High Voltage Input Low Voltage
V V V
Max
5.5
VCC + 0.3
0.8
Typ
5.0
-
-
Min
4.5
2.2
-0.3*
*Note :VIL(min) = -3.0V for <= 10ns pulse
Symbol Parameter Rating Unit
TA
TSTG TSOL
-25 ~ 85
-55 ~ 150
260, 10 (at lead)
Ambient Temperature under Bias
Storage Temperature Soldering Temperature and Time
C
C
C, S
VCC -0.3 ~ 7.0Supply Voltage V VIN VI/O -0.5 ~ VCC + 0.5
Input Voltage Input and Output Voltage
V V
PD 1.0Power Dissipation W
C C-40 ~ 85
0 ~ 70
GM76C8128C-E GM76C8128C-I
GM76C8128C
Capacitance (f = 1MHZ, TA = 25C)
Symbol Parameter Unit
CIN CI/O
Input Capacitance Output Capacitance
pF pF
Max
6 8
MinTest Conditions
VI = 0V VO = 0V
-
-
*Note: This parameter is sampled and not 100% tested.
-0.3 ~ 7.0
GM76C8128CL/CLL
87
DC Operating Characteristics (VCC = 5V+/-10%, TA = - 40 ~ 85C)
*Typ. Values are measured at 25C
Symbol Parameter
II(L) Input Leakage Current
IO(L) Output Leakage Current
VOH High Level Output Voltage VOL Low Level Output Voltage
ICC
Operating Supply Current
ICC1
Average Operating Current
ICC2
ICCS1 ICCS2
Standby Current(TTL)
Conditions
VIN = 0 to VCC
/CS1 = VIH or CS2 = VIL /OE = VIH, VSS <=VOUT<=VCC
IOH = -1.0mA IOL = 2.1mA
/CS1 = VIL and CS2 = VIH VIN = VIH/VIL, IOUT = 0mA
/CS1 = VIL and CS2 = VIH VIN = VIH/VIL IOUT = 0mA
tcycle = Min, cycle
/CS1 = 0.2V, CS2 = VCC-0.2V VIN = VCC - 0.2V/0.2V IOUT = 0mA
tcycle = 1us
/CS1 = VIH, CS2 = VIL
/CS1 = VCC-0.2V CS2 = 0.2V
Unit
uA
uA
V V
mA
mA
mA
mA
Max
1
1
-
0.4
15
70
10
2
*Typ
-
-
-
-
-
Min
-1
-1
2.4
-
-
-
-
-
uA
uA
100
50
-
-
-
-
-
-
-
-
-
GM76C8128C-E GM76C8128C-I
GM76C8128C
Standby Current(CMOS)
100
20
-
-
L - Version LL - Version
L - Version LL - Version
Test Conditions (VCC = 5V+/-10%, TA = - 40 ~ 85C, unless otherwise noted.)
AC Operating Characteristics
Parameter
Input Pulse Level Input Rise and Fall Time
Value
0.6V to 2.4V 5ns
Input and Output Timing Reference Levels 1.5V Output Load See below
Output Load (A)
Output Load (B) (for tCHZ, tCLZ, tWHZ, tOW, tOLZ & tOHZ)
+5V
DOUT
1.8K§Ù
990§Ù
5 §Ü*
+5V
DOUT
1.8K§Ù
990§Ù
100 §Ü*
GM76C8128CL/CLL
88
AC Operating Characteristics (VCC = 5V+/-10%, TA = - 40 ~ 85C)
Symbol Parameter Unit
tRC Read Cycle Time tAA Address Access Time tACS1 Chip Select 1 Access Time tACS2 Chip Select 2 Access Time tOE Output Enable Access Time tCLZ1 Chip Select 1 Output Setup Time tCHZ1 Chip Select 1 Output Floating tCLZ2 Chip Select 2 Output Setup Time tCHZ2 Chip Select 2 Output Floating tOLZ Output Enable Output Setup Time tOHZ Output Enable Output Floating tOH Output Hold Time
MaxMin
ns ns ns ns ns ns ns ns ns ns ns ns
­85 85 85 45
­30
­30
­30
-
85
-
-
-
-
10
-
10
-
0
-
10
­55 55 55 30
­20
­20
­20
-
55
-
-
-
-
5
-
5
-
0
-
5
Write Cycle
Symbol Parameter Unit
tWC Write Cycle Time tCW1 Chip Select Time 1 tCW2 Chip Select Time 2 tAW Address Enable Time tAS Address Setup Time tWP Write Pulse Width tWR Address Hold Time tDW Input Data Setup Time tDH Input Data Hold Time tWHZ Write to Output in High-Z tOW Output Active from End of Write
MaxMin
ns ns ns ns ns ns ns ns ns ns ns
-85-55
-
50 50 50
0
0
0
0
45
25
20
-
-
-
-
-
-
-
-
-
-
75 75 70
0
0
0
0
60
35
30
-
-
-
-
-
-
-
-
-
Read Cycle
MaxMin MaxMin
MaxMin MaxMin
­70 70 70 35
­25
­25
­25
-
70
-
-
-
-
5
-
5
-
0
-
10
-70
-
65 65 60
0
0
0
0
50
30
25
-
-
-
-
-
-
-
-
-
GM76C8128C-55 GM76C8128C-70 GM76C8128C-85
GM76C8128C-55 GM76C8128C-70 GM76C8128C-85
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