Datasheet RFM4N35, RFM4N40, RFP4N35, RFP4N40 Datasheet (Intersil)

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Semiconductor
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RFM4N35, RFM4N40, RFP4N35, RFP4N40
Data Sheet October 1998 File Number 1491.3
[ /Title
[ /Title (RFM4N
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Sub-
RFM4N
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40,
Autho
RFP4N3
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Key-
RFP4N4
words
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Subject
Cre-
(4A,
ator () 350V
DOCI
and
NFO 400V,
pdf-
2.000
mark Ohm, N-
Channel
[ Power
Page-
MOS-
Mode FETs)
Use- Author
Out- ()
lines
Key-
DOC-
words
VIEW (Harris
pdf- Semi-
mark conduc-
tor, N­Channel Power MOS­FETs, TO­204AA, TO­220AB)
Creator
()
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs
Formerly developmental type TA17404.
Ordering Information
PART NUMBER PACKAGE BRAND
RFM4N35 TO-204AA RFM4N35 RFM4N40 TO-204AA RFM4N40 RFP4N35 TO-220AB RFP4N35 RFP4N40 TO-220AB RFP4N40
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA JEDEC TO-220AB
DRAIN (FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
Features
• 4A, 350V and 400V
•r
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 2.000
DS(ON)
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
| Copyright © Harris Corporation 1998
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RFM4N35, RFM4N40, RFP4N35, RFP4N40
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
RFM4N35 RFM4N40 RFP4N35 RFP4N40 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
350 400 350 400 V 350 400 350 400 V
4444A 8888A
±20 ±20 ±20 ±20 V
75 75 60 60 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ,T
STG
-55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300 260
300 260
300 260
300 260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0
RFM4N40, RFP4N40 400 - - V RFM4N35, RFP4N35 350 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero-Gate Voltage Drain Current I
Gate to Source Leakage Current I Drain to Source On Resistance (Note 2) r Drain to Source On-Voltage (Note 2) V Turn-On Delay Time t
DS(ON)ID
DS(ON)ID D(ON)
Rise Time t Turn-Off Delay Time t
D(OFF)
Fall Time t Input Capacitance C Output Capacitance C Reverse-Transfer Capacitance C Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS OSS RSS
JC
θ
= VDS, ID = 250µA (Figure 8) 2 - 4 V
VDS= Rated BV
DSS
VDS= 0.8 x Rated BV
, TC = 125oC- -25µA
DSS
--1µA
VGS = ±20V, VDS = 0 - - ±100 nA
= 4A, VGS = 10V (Figures 6, 7) - - 2.000 = 4A, VGS = 10V - - 8 V
VDD = 200V, ID= 2A, RG= 50 RL= 100, VGS = 10V (Figures 10, 11, 12)
-1245ns
-4260ns
- 130 200 ns
- 62 100 ns
VDS = 25V, VGS = 0V f = 1MHz (Figure 9)
- - 750 pF
- - 150 pF
- - 100 pF
RFM4N35, RFM4N40 - - 1.67
o
C/W
RFP4N35, RFP4N40 - - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V Reverse Recorvery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
ISD = 2A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 800 - ns
Page 3
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATIONvsCASE
TEMPERATURE
10
TC = 25OC TJ = MAX RATED
RFM4N35, 40 RFP4N35, 40
1
, DRAIN CURRENT (A)
D
I
0.1 1 10 100 1000
OPERATION IN THIS AREA MAY BE LIMITED BY r
V
DS(ON)
RFM4N35, RFP4N35 RFM4N40, RFP4N40
, DRAIN TO SOURCE VOLTAGE
DS
5
4
3
RFP4N35, RFP4N40
2
, DRAIN CURRENT (A)
D
I
1
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (oC)
C
RFM4N35, RFM4N40
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
TC = 25oC 80µs PULSE TEST
7
DUTY CYCLE 2%
6
5
4
3
, DRAIN CURRENT (A)
2
D
I
1
0 5 10 15 20 25
VGS = 20 V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
VGS = 8 - 10V VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
8
VDS= 20V PULSE DURATION = 80µs
7
DUTY CYCLE 2%
6
5
4
3
, DRAIN CURRENT (A)
D
2
I
1 0
0246810
TC= 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
TC= -40oC
4
3
2
, DRAIN TO SOURCE
ON RESISTANCE ()
1
DS(ON)
r
0
VGS = 10V
TC = 125oC
TC = 25oC
TC= -40oC
2345678910
1
0
, DRAIN CURRENT (A)
I
D
PULSE DURATION = 80µs DUTY CYCLE 2%
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCEvs DRAIN
CURRENT
3
Page 4
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
2
ID= 4A V
= 10V
GS
1.5
1
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-50 0 50 100 150 200 T
, JUNCTION TEMPERATURE (oC)
J
(Continued)
FIGURE 7. NORMALIZED DRAIN TOSOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
800
700
600
500
400
300
C, CAPACITANCE (pF)
200
100
0
C
RSS
01020304050
, DRAIN TO SOURCE (V)
V
DS
VGS = 0V, f = 1MHz
= CGS + C
C C C
ISS RSS OSS
= C
CDS + C
GD
C
C
GD
ISS
OSS
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
GS
1.5 VDS = 10V
= 250µA
I
D
1
0.5
NORMALIZED GATE
THRESHOLD VOLTAGE
0
-50 0 50 125 150 175 , JUNCTION TEMPERATURE (0C)
T
J
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
500
SOURCE
VOLTAGE
R
L
I
G(REF)
V
GS
0.75 BV
0.50 BV
0.25 BV
t, TIME (µs)
GATE
TO
=100
= 0.45mA
= 10V
DSS DSS DSS
VDD = BV
80
DSS
I
G(REF)
I
G(ACT)
DRAIN TO SOURCE VOLTAGE (V)
V
DS,
375
250
125
0
VDD = BV
I
G(REF)
20
I
G(ACT)
DSS
DRAIN SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR
CONSTANT GATE CURRENT
10
8
6
4
2
GATE TO SOURCE VOLTAGE (V)
GS,
V
0
Test Circuits and Waveforms
R
G
V
GS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4
t
ON
t
d(ON)
t
R
L
+
V
DD
-
DUT
V
DS
0
V
GS
10%
0
r
90%
10%
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
90%
10%