Intersil RFM4N35, RFM4N40, RFP4N35, RFP4N40 Datasheet

Semiconductor

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RFM4N35, RFM4N40, RFP4N35, RFP4N40

Data Sheet October 1998 File Number 1491.3

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4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs

These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17404.

Ordering Information

PART NUMBER PACKAGE BRAND

RFM4N35 TO-204AA RFM4N35
RFM4N40 TO-204AA RFM4N40
RFP4N35 TO-220AB RFP4N35
RFP4N40 TO-220AB RFP4N40

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Features

• 4A, 350V and 400V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 2.000Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFM4N35, RFM4N40, RFP4N35, RFP4N40

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

C

RFM4N35 RFM4N40 RFP4N35 RFP4N40 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

350 400 350 400 V
350 400 350 400 V

4444A
8888A

±20 ±20 ±20 ±20 V

75 75 60 60 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 150 -55 to 150 -55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0

RFM4N40, RFP4N40 400 - - V
RFM4N35, RFP4N35 350 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On-Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID
D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= VDS, ID = 250µA (Figure 8) 2 - 4 V

VDS= Rated BV

DSS

VDS= 0.8 x Rated BV

, TC = 125oC- -25µA

DSS

--1µA

VGS = ±20V, VDS = 0 - - ±100 nA

= 4A, VGS = 10V (Figures 6, 7) - - 2.000 Ω
= 4A, VGS = 10V - - 8 V

VDD = 200V, ID= 2A, RG= 50Ω
RL= 100Ω, VGS = 10V
(Figures 10, 11, 12)

-1245ns

-4260ns

- 130 200 ns

- 62 100 ns

VDS = 25V,
VGS = 0V
f = 1MHz (Figure 9)

- - 750 pF

- - 150 pF

- - 100 pF

RFM4N35, RFM4N40 - - 1.67

o

C/W

RFP4N35, RFP4N40 - - 2.083oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recorvery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

2

ISD = 2A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 800 - ns