
Semiconductor
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Data Sheet October 1998 File Number 1491.3
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pdf-
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tor, NChannel
Power
MOSFETs,
TO204AA,
TO220AB)
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4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Ordering Information
PART NUMBER PACKAGE BRAND
RFM4N35 TO-204AA RFM4N35
RFM4N40 TO-204AA RFM4N40
RFP4N35 TO-220AB RFP4N35
RFP4N40 TO-220AB RFP4N40
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA JEDEC TO-220AB
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
Features
• 4A, 350V and 400V
•r
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 2.000Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
| Copyright © Harris Corporation 1998

RFM4N35, RFM4N40, RFP4N35, RFP4N40
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
RFM4N35 RFM4N40 RFP4N35 RFP4N40 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
350 400 350 400 V
350 400 350 400 V
4444A
8888A
±20 ±20 ±20 ±20 V
75 75 60 60 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ,T
STG
-55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0
RFM4N40, RFP4N40 400 - - V
RFM4N35, RFP4N35 350 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero-Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On-Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
D(ON)
Rise Time t
Turn-Off Delay Time t
D(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
JC
θ
= VDS, ID = 250µA (Figure 8) 2 - 4 V
VDS= Rated BV
DSS
VDS= 0.8 x Rated BV
, TC = 125oC- -25µA
DSS
--1µA
VGS = ±20V, VDS = 0 - - ±100 nA
= 4A, VGS = 10V (Figures 6, 7) - - 2.000 Ω
= 4A, VGS = 10V - - 8 V
VDD = 200V, ID= 2A, RG= 50Ω
RL= 100Ω, VGS = 10V
(Figures 10, 11, 12)
-1245ns
-4260ns
- 130 200 ns
- 62 100 ns
VDS = 25V,
VGS = 0V
f = 1MHz (Figure 9)
- - 750 pF
- - 150 pF
- - 100 pF
RFM4N35, RFM4N40 - - 1.67
o
C/W
RFP4N35, RFP4N40 - - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recorvery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
ISD = 2A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 800 - ns

RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATIONvsCASE
TEMPERATURE
10
TC = 25OC
TJ = MAX RATED
RFM4N35, 40
RFP4N35, 40
1
, DRAIN CURRENT (A)
D
I
0.1
1 10 100 1000
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
DS(ON)
RFM4N35, RFP4N35
RFM4N40, RFP4N40
, DRAIN TO SOURCE VOLTAGE
DS
5
4
3
RFP4N35, RFP4N40
2
, DRAIN CURRENT (A)
D
I
1
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (oC)
C
RFM4N35, RFM4N40
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
TC = 25oC
80µs PULSE TEST
7
DUTY CYCLE ≤ 2%
6
5
4
3
, DRAIN CURRENT (A)
2
D
I
1
0 5 10 15 20 25
VGS = 20 V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
VGS = 8 - 10V
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
8
VDS= 20V
PULSE DURATION = 80µs
7
DUTY CYCLE ≤ 2%
6
5
4
3
, DRAIN CURRENT (A)
D
2
I
1
0
0246810
TC= 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
TC= -40oC
4
3
2
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
1
DS(ON)
r
0
VGS = 10V
TC = 125oC
TC = 25oC
TC= -40oC
2345678910
1
0
, DRAIN CURRENT (A)
I
D
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCEvs DRAIN
CURRENT
3

RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
2
ID= 4A
V
= 10V
GS
1.5
1
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-50 0 50 100 150 200
T
, JUNCTION TEMPERATURE (oC)
J
(Continued)
FIGURE 7. NORMALIZED DRAIN TOSOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
800
700
600
500
400
300
C, CAPACITANCE (pF)
200
100
0
C
RSS
01020304050
, DRAIN TO SOURCE (V)
V
DS
VGS = 0V, f = 1MHz
= CGS + C
C
C
C
ISS
RSS
OSS
= C
≈ CDS + C
GD
C
C
GD
ISS
OSS
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
GS
1.5
VDS = 10V
= 250µA
I
D
1
0.5
NORMALIZED GATE
THRESHOLD VOLTAGE
0
-50 0 50 125 150 175
, JUNCTION TEMPERATURE (0C)
T
J
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
500
SOURCE
VOLTAGE
R
L
I
G(REF)
V
GS
0.75 BV
0.50 BV
0.25 BV
t, TIME (µs)
GATE
TO
=100Ω
= 0.45mA
= 10V
DSS
DSS
DSS
VDD = BV
80
DSS
I
G(REF)
I
G(ACT)
DRAIN TO SOURCE VOLTAGE (V)
V
DS,
375
250
125
0
VDD = BV
I
G(REF)
20
I
G(ACT)
DSS
DRAIN SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR
CONSTANT GATE CURRENT
10
8
6
4
2
GATE TO SOURCE VOLTAGE (V)
GS,
V
0
Test Circuits and Waveforms
R
G
V
GS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4
t
ON
t
d(ON)
t
R
L
+
V
DD
-
DUT
V
DS
0
V
GS
10%
0
r
90%
10%
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
90%
10%