International Rectifier ST110S16P2L, ST110S16P2, ST110S16P1L, ST110S16P1, ST110S16P0L Datasheet

Features

Center gate
Hermetic metal case with ceramic insulator

(Also available with glass-metal seal up to 1200V)
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A
Compression Bonded Encapsulation for heavy duty

operations such as severe thermal cycling

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

I

T(AV)

110 A

@ T

C

90 °C

I

T(RMS)

175 A

I

TSM

@ 50Hz 2700 A
@ 60Hz 2830 A

I2t@

50Hz 36.4 KA2s

@ 60Hz 33.2 KA2s

V

DRM/VRRM

400 to 1600 V

t

q

typical 100 µs

T

J

- 40 to 125 °C

Parameters ST110S Units

Major Ratings and Characteristics

case style

TO-209AC (TO-94)

110A

PHASE CONTROL THYRISTORS Stud Version

ST110S SERIES

Bulletin I25167/B

ST110S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

, max. repetitive V

RSM

, maximum non- I

DRM/IRRM

max.

Type number Code peak and off-state voltage repetitive peak voltage @ T

J

= TJ max

VVmA

04 400 500
08 800 900

ST110S 12 1200 1300 20

14 1400 1500
16 1600 1700

I

T(AV)

Max. average on-state current 110 A 180° conduction, half sine wave
@ Case temperature 90 °C

I

T(RMS)

Max. RMS on-state current 175 A DC @ 85°C case temperature

I

TSM

Max. peak, one-cycle 2700 t = 10ms No voltage
non-repetitive surge current 2830 t = 8.3ms reapplied

2270 t = 10ms 100% V

RRM

2380 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 36.4 t = 10ms No voltage Initial TJ = TJ max.

33.2 t = 8.3ms reapplied

25.8 t = 10ms 100% V

RRM

23.5 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 364 KA2√s t = 0.1 to 10ms, no voltage reapplied

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)

2

High level value of threshold
voltage

r

t1

Low level value of on-state
slope resistance

r

t2

High level value of on-state
slope resistance

V

TM

Max. on-state voltage 1.52 V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse

I

H

Maximum holding current 600

I

L

Typical latching current 1000

0.90 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.79 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.81 (I > π x I

T(AV)

),TJ = TJ max.

Parameter ST110S Units Conditions

0.92 (I > π x I

T(AV)

),TJ = TJ max.

On-state Conduction

KA2s

V

mΩ

mA

T

J

= 25°C, anode supply 12V resistive load

A

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

J

= TJ max, anode voltage ≤ 80% V

DRM

Gate current 1A, d ig/dt = 1A/µs
V

d

= 0.67% V

DRM, TJ

= 25°C

I

TM

= 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V

dv/dt

= 20V/µs, Gate 0V 100Ω, tp = 500µs

Parameter ST110S Units Conditions

t

d

Typical delay time 2.0

Switching

t

q

Typical turn-off time 100

µs

500 A/µs

ST110S Series

dv/dt Maximum critical rate of rise of

off-state voltage

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Blocking

500 V/µs TJ = TJ max. linear to 80% rated V

DRM

Parameter ST110S Units Conditions

20 mA TJ = TJ max, rated V

DRM/VRRM

applied

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance,
junction to case

R

thCS

Max. thermal resistance,
case to heatsink

T Mounting torque, ± 10% 15.5 Non lubricated threads

(137)

14 Lubricated threads

(120)

wt Approximate weight 130 g

Parameter ST110S Units Conditions

0.195 DC operation

0.08 Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification

P

GM

Maximum peak gate power 5 TJ = TJ max, tp ≤ 5ms

P

G(AV)

Maximum average gate power 1 TJ = TJ max, f = 50Hz, d% = 50

I

GM

Max. peak positive gate current 2.0 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

DC gate current required TJ = - 40°C
to trigger mA T

J

= 25°C

TJ = 125°C

V

GT

DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C

T

J

= 125°C

I

GD

DC gate current not to trigger 10 mA

Parameter ST110S Units Conditions

20

5.0

Triggering

V

GD

DC gate voltage not to trigger 0.25 V

T

J

= TJ max

TYP. MAX.

180 -

90 150
40 -

2.9 -

1.8 3.0

1.2 ­Max. gate current/ voltage not to

trigger is the max. value which
will not trigger any unit with rated
V

DRM

anode-to-cathode applied

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

W

°C

K/W

Nm

(lbf-in)

Case style TO - 209AC (TO-94) See Outline Table

VT

J

= TJ max, tp ≤ 5ms