OptiMOS Power-Transistor
j
stg
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Product Summary
V
DS
R
DS(on)
I
D
55 V
6.6 mΩ
80 A
• Avalanche rated
P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1
• dv/dt rated
Type Package Ordering Code
SPP80N06S2-07 P- TO220 -3-1 Q67060-S6024
SPB80N06S2-07 P- TO263 -3-2 Q67060-S6026
SPI80N06S2-07 P- TO262 -3-1 Q67060-S6037
Marking
2N0607
2N0607
2N0607
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
I
D
80
A
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, T
jmax
=175°C
jmax
2)
I
E
E
dv/dt 6 kV/µs
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1
Page 1
D puls
AS
AR
GS
tot
, T
80
320
530 mJ
25
±20
250 W
-55... +175
55/175/56
2003-05-09
V
°C
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
R
R
thJC
thJA
thJA
- 0.4 0.6 K/W
- - 62
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID=180µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
55 - - V
2.1 3 4
-
0.01
1
µA
VDS=55V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=68A
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
= 0.6K/W the chip is able to carry ID= 135A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
-
1
100
- 1 100 nA
- 5.6 6.6
mΩ
Page 2
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=80A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
51 102 - S
- 3400 4540 pF
- 880 1100
- 215 320
VDD=30V, VGS=10V,
ID=80A,
RG=3.3Ω
- 16 24 ns
- 37 56
- 61 91
- 36 54
VDD=44V, ID=80A - 18 24 nC
- 35 53
VDD=44V, ID=80A,
VGS=0 to 10V
VDD=44V, ID=80A - 4.9 - V
- 86 110
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed
I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TC=25°C - - 80 A
- - 320
VGS=0V, IF=80A - 0.96 1.3 V
VR=30V, I
diF/dt=100A/µs
Page 3
F=lS
,
- 55 70 ns
- 96 120 nC
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
1 Power dissipation
P
= f (TC)
tot
parameter: VGS≥ 6 V
SPP80N06S2-07
280
W
240
220
200
tot
180
P
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160°C190
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
SPP80N06S2-07
90
A
70
60
D
I
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160°C 190
T
C
T
C
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
3
SPP80N06S2-07
10
A
D
I
/
2
10
D
I
1
10
0
10
-1
10
DS
V
=
DS(on)
R
0
10
10
4 Max. transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
SPP80N06S2-07
1
10
K/W
t
= 15.0µs
p
100 µs
1 ms
1
V
V
DS
10
2
thJC
Z
10
10
10
10
10
10
-1
-2
-3
-4
-5
0
10
single pulse
-7
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-6
-5
-4
-3
10
10
10
10
-2
t
0
s
10
p
Page 4
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N06S2-07
190
Ptot = 250W
A
160
140
120
D
I
100
80
60
40
20
0
0 1 2 3 4
h
VGS [V]
a 3.8
b 4.0
c 4.2
d 4.5
g
e 4.8
f 5.0
g 5.3
f
h 10.0
e
d
c
b
a
6 Typ. drain-source on resistance
R
parameter: V
V
5.5
V
DS
= f (ID)
DS(on)
GS
SPP80N06S2-07
21
m Ω
18
16
14
DS(on)
c
d
R
12
10
8
6
4
VGS [V] =
2
c
d
e
f
4.2
4.5
4.8
0
0 20 40 60 80 100
g
5.0
5.3
e
10.0
f
h
g
h
A
140
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
160
A
120
100
D
I
80
60
40
20
0
0 1 2 3 4
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
120
S
100
90
80
fs
g
70
60
50
40
30
20
10
V
6
V
GS
0
0 20 40 60 80 100 120 A 150
fs
I
D
Page 5
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 68 A, VGS = 10 V
SPP80N06S2-07
24
mΩ
20
18
16
DS(on)
R
14
12
10
8
6
4
2
0
-60 -20 20 60 100 140
98%
typ
°C
10 Gate threshold voltage
V
parameter: VGS = V
200
T
j
= f (Tj)
GS(th)
DS
4
V
3
2.5
VGS(th)
2
1.5
1
0.5
0
-60 -20 20 60 100
180 µA
900 µA
°C
180
T
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
C
3
10
2
10
0 5 10 15 20
C
C
C
iss
oss
rss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
3
SPP80N06S2-07
10
A
2
10
F
I
1
10
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0
10
V
30
V
DS
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
Page 6
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A, VDD = 25 V, RGS = 25 Ω
550
mJ
450
400
AS
350
E
300
250
200
150
100
50
0
25 45 65 85 105 125 145 °C 185
T
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 80 A pulsed
SPP80N06S2-07
16
V
12
GS
10
V
8
6
4
2
0
0 20 40 60 80 100
j
V0,2
DS max
0,8 V
DS max
nC
Q
130
Gate
15 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
SPP80N06S2-07
66
V
62
(BR)DSS
60
V
58
56
54
52
50
-60 -20 20 60 100 140
°C
200
T
j
Page 7
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Published by
Infineon Technologies AG ,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N06S2-07, BSPB80N06S2-07 and BSPI80N06S2-07, for
simplicity the device is referred to by the term SPP80N06S2-07, SPB80N06S2-07 and SPI80N06S2-07
throughout this documentation
Page 8
2003-05-09
Loading...