INFINEON SPI80N06S2-07, SPP80N06S2-07, SPB80N06S2-07 User Manual
OptiMOS Power-Transistor
j
stg
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Product Summary
V
DS
R
DS(on)
I
D
55 V
6.6 mΩ
80 A
• Avalanche rated
P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1
• dv/dt rated
Type Package Ordering Code
SPP80N06S2-07 P- TO220 -3-1 Q67060-S6024
SPB80N06S2-07 P- TO263 -3-2 Q67060-S6026
SPI80N06S2-07 P- TO262 -3-1 Q67060-S6037
Marking
2N0607
2N0607
2N0607
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
I
D
80
A
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, T
jmax
=175°C
jmax
2)
I
E
E
dv/dt 6 kV/µs
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1
Page 1
D puls
AS
AR
GS
tot
, T
80
320
530 mJ
25
±20
250 W
-55... +175
55/175/56
2003-05-09
V
°C
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
R
R
thJC
thJA
thJA
- 0.4 0.6 K/W
- - 62
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID=180µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
55 - - V
2.1 3 4
-
0.01
1
µA
VDS=55V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=68A
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
= 0.6K/W the chip is able to carry ID= 135A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
-
1
100
- 1 100 nA
- 5.6 6.6
mΩ
Page 2
2003-05-09
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=80A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
51 102 - S
- 3400 4540 pF
- 880 1100
- 215 320
VDD=30V, VGS=10V,
ID=80A,
RG=3.3Ω
- 16 24 ns
- 37 56
- 61 91
- 36 54
VDD=44V, ID=80A - 18 24 nC
- 35 53
VDD=44V, ID=80A,
VGS=0 to 10V
VDD=44V, ID=80A - 4.9 - V
- 86 110
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed
I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TC=25°C - - 80 A
- - 320
VGS=0V, IF=80A - 0.96 1.3 V
VR=30V, I
diF/dt=100A/µs
Page 3
F=lS
,
- 55 70 ns
- 96 120 nC
2003-05-09
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