INFINEON SPD30N06S2-15 User Manual
OptiMOS Power-Transistor
j
stg
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
SPD30N06S2-15
Product Summary
V
DS
R
DS(on)
I
D
55 V
14.7 mΩ
30 A
• Avalanche rated
P- TO252 -3-11
• dv/dt rated
Type Package Ordering Code
SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253
Marking
2N0615
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
I
D
30
A
30
Pulsed drain current
TC=25°C
I
D puls
120
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=30A, VDS=44V, di/dt=200A/µs, T
jmax
=175°C
jmax
2)
E
E
dv/dt 6 kV/µs
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1
Page 1
AS
AR
GS
tot
, T
240 mJ
13.6
±20
136 W
-55... +175
55/175/56
2003-05-09
V
°C
SPD30N06S2-15
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
R
R
thJC
thJA
thJA
- 0.69 1.1 K/W
- - 100
-
-
-
-
75
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID=80µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
55 - - V
2.1 3 4
-
0.01
1
µA
VDS=55V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=30A
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
= 1.1K/W the chip is able to carry ID= 67A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
-
1
100
- 1 100 nA
- 11.4 14.7
mΩ
Page 2
2003-05-09
SPD30N06S2-15
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=30A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
19 38 - S
- 1560 2070 pF
- 404 540
- 105 160
VDD=30V, VGS=10V,
ID=30A,
RG=7.5Ω
- 11 17 ns
- 20 30
- 32 48
- 19 28
VDD=44V, ID=30A - 8 11 nC
- 16 24
VDD=44V, ID=30A,
VGS=0 to 10V
VDD=44V, ID=30A - 5.6 - V
- 39 52
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed
I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TC=25°C - - 30 A
- - 120
VGS=0V, IF=30A - 1 1.3 V
VR=30V, I
diF/dt=100A/µs
Page 3
F=lS
,
- 45 56 ns
- 78 97 nC
2003-05-09
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