INFINEON SDT08S60 User Manual

查询Q67040S4647供应商

SDT08S60SDT08S60

Silicon Carbide Schottky Diode

• Worlds first 600V Schottky diode

• Revolutionary semiconductor

material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

the switching behavior

• No forward recovery

Type Package Ordering Code

SDT08S60 P-TO220-2-2. Q67040S4647

thinQ! SiC Schottky Diode

Product Summary

Marking

D08S60

V

RRM

Q

c

I

F

Pin 1 Pin 2

C A

600

24 nC

8 A

P-TO220-2-2.

V

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous forward current, T

=100°C

C

RMS forward current, f=50Hz

Surge non repetitive forward current, sine halfwave

TC=25°C, tp=10ms

Repetitive peak forward current

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current

tp=10µs, TC=25°C

i 2t value, T

=25°C, t

C

=10ms ∫i

p

Repetitive peak reverse voltage V

Surge peak reverse voltage V

Power dissipation, T

=25°C

C

Operating and storage temperature T

Symbol Value Unit

I

F

I

FRMS

I

FSM

I

FRM

I

FMAX

2

dt

RRM

RSM

P

tot

T

,

j

stg

8 A

11.3

26

32

80

3.4

600 V

600

65 W

-55... +175

A²s

°C

Rev. 2.0

Page 1

2004-03-18

Thermal Characteristics

SDT08S60SDT08S60

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

R

R

thJC

thJA

- - 2.3 K/W

- - 62

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Diode forward voltage

IF=8A, Tj=25°C

=8A, Tj=150°C

I

F

Reverse current

VR=600V, Tj=25°C

V

I

F

-

-

R

-

1.5

1.7

28

1.7

2.1

300

V

µA

V

=600V, Tj=150°C

R

-

70

1500

Rev. 2.0

Page 2

2004-03-18

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SDT08S60SDT08S60

Parameter

AC Characteristics

Total capacitive charge

VR=400V, IF=8A, diF/dt=200A/µs, Tj=150°C

Switching time

VR=400V, IF=8A, diF/dt=200A/µs, Tj=150°C

Total capacitance

VR=0V, TC=25°C, f=1MHz

=300V, TC=25°C, f=1MHz

V

R

=600V, TC=25°C, f=1MHz

V

R

Symbol Values Unit

min. typ. max.

Q

c

t

rr

C

- 24 - nC

- n.a - ns

-

-

-

280

26

18

pF

-

-

-

Rev. 2.0

Page 3

2004-03-18

SDT08S60SDT08S60

j

1 Power dissipation

P

= f (TC)

tot

SDT08S60

70

W

60

55

50

tot

45

P

40

35

30

25

20

15

10

5

0

0 20 40 60 80 100 120 140 160°C190

2 Diode forward current

I

= f (TC)

F

parameter:

A

F

I

T

C

Tj≤175 °C

9

7

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140

°C

T

180

C

3 Typ. forward characteristic

I

= f (VF)

F

T

parameter:

16

A

12

10

F

I

8

6

4

2

0

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

, tp = 350 µs

150°C
125°C
100°C
25°C

-40°C

4 Typ. forward power dissipation vs.

average forward current

P

2.5

V

V

F

=

f(I

) T

F(AV)

F(AV)

P

F

36

d=1

W

d=0,5
d=0,2
d=0,1

28

24

20

16

12

8

4

0

0 2 4 6 8 10 12

=100°C, d = tp/T

C

A

I

F(AV)

16

Rev. 2.0

Page 4

2004-03-18

SDT08S60SDT08S60

5 Typ. reverse current vs. reverse voltage

I

=f(VR)

R

2

10

µA

1

10

150°C
125°C
100°C

0

R

10

I

25°C

-1

10

-2

10

-3

10

100 150 200 250 300 350 400 450 500

600

V

V

R

6 Transient thermal impedance

Z

= f (tp)

thJC

parameter :

SDT08S60

1

10

K/W

0

10

-1

10

thJC

Z

-2

10

-3

10

-4

10

-5

10

-7

10

D = t

single pulse

10

/T

p

-6

-5

-4

-3

10

10

10

10

-2

D = 0.50

0.20

0.10

0.05

0.02

0.01

s

t

p

10

0

7 Typ. capacitance vs. reverse voltage

C= f(V

parameter:

C

300

pF

240

220

200

180

160

140

120

100

80

60

40

20

0

10

)

R

T

= 25 °C, f = 1 MHz

C

0

10

1

10

2

V

V

R

10

8 Typ. C stored energy

E

=f(VR)

C

5

µJ

4

3.5

C

E

3

2.5

2

1.5

1

0.5

3

0

0 100 200 300 400

600

V

V

R

Rev. 2.0

Page 5

2004-03-18

9 Typ. capacitive charge vs. current slop

e

SDT08S60SDT08S60

Qc=f(di

F

/dt)

parameter:

35

nC

IF*2

25

c

Q

20

15

10

5

0

0 100 200 300 400 500 600 700 800

T

= 150 °C

j

IF*0.5

I

F

A/µs

diF/dt

1000

Rev. 2.0

Page 6

2004-03-18

TO-220-2-2

A

N

SDT08S60SDT08S60

P

symbol

E

D

U

V

B

H

F

W

J

X

L

G

T

C

M

K

A 9.70 10.10 0.3819 0.3976

B 15.30 15.90 0.6024 0.6260

C 0.65 0.85 0.0256 0.0335

D 3.55 3.85 0.1398 0.1516

E 2.60 3.00 0.1024 0.1181

F 9.00 9.40 0.3543 0.3701

G 13.00 14.00 0.5118 0.5512

H 17.20 17.80 0.6772 0.7008

J 4.40 4.80 0.1732 0.1890

K 0.40 0.60 0.0157 0.0236

L

M

N

P 1.10 1.40 0.0433 0.0551

T

U

V

W

X 0.00 0.40 0.0000 0.0157

dimensions

[mm] [inch]

min ma x mi n ma x

0.41 typ.1.05 ty p.

2.54 ty p. 0.1 ty p.

4.4 typ. 0.173 typ.

2.4 typ. 0.095 typ.

0.26 typ.6.6 typ.

0.51 typ.13.0 typ.

7.5 typ. 0.295 typ.

Rev. 2.0

Page 7

2004-03-18

SDT08S60SDT08S60

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Rev. 2.0

Page 8

2004-03-18

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