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SDT08S60SDT08S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Type Package Ordering Code
SDT08S60 P-TO220-2-2. Q67040S4647
thinQ! SiC Schottky Diode
Product Summary
Marking
D08S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
C A
600
24 nC
8 A
P-TO220-2-2.
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
8 A
11.3
26
32
80
3.4
600 V
600
65 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-18
Thermal Characteristics
SDT08S60SDT08S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
R
R
thJC
thJA
- - 2.3 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=8A, Tj=25°C
=8A, Tj=150°C
I
F
Reverse current
VR=600V, Tj=25°C
V
I
F
-
-
R
-
1.5
1.7
28
1.7
2.1
300
V
µA
V
=600V, Tj=150°C
R
-
70
1500
Rev. 2.0
Page 2
2004-03-18
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT08S60SDT08S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=8A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=8A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=0V, TC=25°C, f=1MHz
=300V, TC=25°C, f=1MHz
V
R
=600V, TC=25°C, f=1MHz
V
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 24 - nC
- n.a - ns
-
-
-
280
26
18
pF
-
-
-
Rev. 2.0
Page 3
2004-03-18