OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
product (FOM)
DS(on)
DS(on)
1)
for target application
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Product Summary
V
DS
R
DS(on),max (TO252)
I
D
100 V
49
20 A
mΩ
Type
Package
Marking
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
Gate source voltage
IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G
PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3
50CN10N 49CN10N 50CN10N 50CN10N
=25 °C, unless otherwise specified
j
Value
I
D
2)
3)
I
D,pulse
E
AS
V
GS
TC=25 °C
T
=100 °C
C
TC=25 °C
ID=20 A, RGS=25 Ω
=20 A, VDS=80 V,
I
D
di /dt =100 A/µs,
T
=175 °C
j,max
20 A
14
80
29 mJ
6 kV/µs
±20 V
stg
TC=25 °C
44 W
-55 ... 175 °C
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
IEC climatic category; DIN IEC 68-1 55/175/56
1)
J-STD20 and JESD22
2)
see figure 3
3)
T
=150°C and duty cycle D=0.01 for Vgs<-5V
jmax
Rev. 1.05 page 1 2008-06-24
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient (TO220, TO262, TO263)
Thermal resistance, junction ambient (TO252, TO251)
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm2 cooling area
4)
minimal footprint - - 75
6 cm2 cooling area
4)
- - 3.4 K/W
--40
--50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=20 µA
VDS=80 V, VGS=0 V,
T
=25 °C
j
100 - - V
234
- 0.1 1 µA
V
=80 V, VGS=0 V,
DS
T
=125 °C
j
Gate-source leakage current
Drain-source on-state resistance
I
R
GSS
DS(on)
VGS=20 V, VDS=0 V
VGS=10 V, ID=20 A,
(TO252)
=10 V, ID=20 A,
V
GS
(TO251)
V
=10 V, ID=20 A,
GS
(TO263)
V
=10 V, ID=20 A,
GS
(TO220, TO262)
Gate resistance
Transconductance
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
R
G
g
fs
|VDS|>2|ID|R
I
=20 A
D
DS(on)max
- 10 100
- 1 100 nA
-3749
-3749
-3850
-3850
-1-
,
11 21 - S
mΩ
Ω
Rev. 1.05 page 2 2008-06-24
IPB50CN10N G IPD49CN10N G
g
IPI50CN10N G IPP50CN10N G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
5)
C
C
C
t
t
t
t
Q
Q
Q
Q
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
sw
g
=0 V, VDS=50 V,
V
GS
f =1 MHz
V
=50 V, VGS=10 V,
DD
=20 A, RG=1.6 Ω
I
D
=50 V, ID=20 A,
V
DD
V
=0 to 10 V
GS
- 822 1090 pF
- 120 160
-1015
-1015ns
-46
-1420
-34
-56nC
-34
-57
-1216
Gate plateau voltage
Output charge
V
Q
plateau
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
t
rr
Q
rr
VDD=50 V, VGS=0 V
=25 °C
T
C
VGS=0 V, IF=20 A,
T
=25 °C
j
VR=50 V, IF=IS,
di
/dt =100 A/µs
F
- 5.7 - V
-1217nC
- - 20 A
--80
- 1 1.2 V
- 100 ns
- 140 - nC
Rev. 1.05 page 3 2008-06-24
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
50
40
30
[W]
tot
P
20
10
0
0 50 100 150 200
TC [°C]
25
20
15
[A]
D
I
10
5
0
0 50 100 150 200
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
p
2
1 µs
10 µs
=f(tp)
thJC
parameter: D =tp/T
10
100 µs
1
[A]
D
I
10
10
10
0
-1
10
-1
10
0
DC
1
10
VDS [V]
1 ms
10 ms
10
0.5
[K/W]
1
0.1
0.2
0.1
0.05
0.02
0.01
single pulse
thJC
Z
2
10
3
tp [s]
Rev. 1.05 page 4 2008-06-24
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
[A]
D
I
60
40
20
10 V
8 V
7 V
6.5 V
6 V
5.5 V
]
Ω
[m
DS(on)
R
120
100
80
60
40
5 V
5.5 V
6 V
20
5 V
0
012345
VDS [V]
4.5 V
0
0 10203040
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
DS(on)max
gfs=f(ID); Tj=25 °C
7 V
6.5 V
8 V
10 V
50
40
30
25
20
30
[A]
D
I
[S]
fs
g
15
20
175 °C
10
25 °C
0
02468
VGS [V]
10
5
0
0102030
ID [A]
Rev. 1.05 page 5 2008-06-24
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=20 A; VGS=10 V V
DS(on)
=f(Tj); VGS=V
GS(th)
parameter: I
DS
D
]
Ω
[m
DS(on)
R
120
100
80
60
40
98 %
typ
[V]
GS(th)
V
3.5
2.5
1.5
4
3
200 µA
20 µA
2
1
20
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
0
-60 -20 20 60 100 140 180
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
parameter: T
4
10
10
j
2
10
10
3
2
Ciss
Coss
C [pF]
Crss
1
10
0
10
0 20406080
VDS [V]
25 °C
175 °C
1
10
[A]
F
I
0
10
-1
10
25 °C, 98%
0 0.5 1 1.5 2
VSD [V]
175 °C, 98%
Rev. 1.05 page 6 2008-06-24
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); RGS=25 Ω
parameter: T
j(start)
=f(Q
GS
parameter: V
); ID=20 A pulsed
gate
DD
100
[A]
10
AS
I
150 °C
1
1 10 100 1000
25 °C
100 °C
tAV [µs]
12
10
8
[V]
6
GS
V
4
2
0
0 2 4 6 8 10 12 14
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
gate
[nC]
20 V
50 V
80 V
115
V
GS
Q
g
110
105
[V]
BR(DSS)
V
100
95
90
-60 -20 20 60 100 140 180
V
gs(th)
Q
g(th)
Q
gs
Q
sw
Q
gd
Q
gate
Tj [°C]
Rev. 1.05 page 7 2008-06-24
PG-TO220-3: Outline
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Rev. 1.05 page 8 2008-06-24
PG-TO-263 (D²-Pak)
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Rev. 1.05 page 9 2008-06-24
PG-TO262-3-1 (I²PAK)
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Rev. 1.05 page 10 2008-06-24
PG-TO252-3: Outline
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Rev. 1.05 page 11 2008-06-24
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.05 page 12 2008-06-24
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