INFINEON IPB50CN10N G, IPD49CN10N G, IPI50CN10N G, IPP50CN10N G User Manual

OptiMOS®2 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R

• Very low on-resistance R

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

• Ideal for high-frequency switching and synchronous rectification

product (FOM)

DS(on)

1)

for target application

IPB50CN10N G IPD49CN10N G

IPI50CN10N G IPP50CN10N G

Product Summary

V

DS

R

DS(on),max (TO252)

I

D

100 V

49

20 A

mΩ

Type

Package

Marking

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt dv /dt

Gate source voltage

IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G

PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3

50CN10N 49CN10N 50CN10N 50CN10N

=25 °C, unless otherwise specified

j

Value

I

D

2)

3)

I

D,pulse

E

AS

V

GS

TC=25 °C

T

=100 °C

C

TC=25 °C

ID=20 A, RGS=25 Ω

=20 A, VDS=80 V,

I

D

di /dt =100 A/µs,

T

=175 °C

j,max

20 A

14

80

29 mJ

6 kV/µs

±20 V

stg

TC=25 °C

44 W

-55 ... 175 °C

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

IEC climatic category; DIN IEC 68-1 55/175/56

1)

J-STD20 and JESD22

2)

see figure 3

3)

T

=150°C and duty cycle D=0.01 for Vgs<-5V

jmax

Rev. 1.05 page 1 2008-06-24

IPB50CN10N G IPD49CN10N G

IPI50CN10N G IPP50CN10N G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ambient (TO220, TO262, TO263)

Thermal resistance, junction ambient (TO252, TO251)

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

minimal footprint - - 62

6 cm2 cooling area

4)

minimal footprint - - 75

6 cm2 cooling area

4)

- - 3.4 K/W

--40

--50

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID=1 mA

VDS=VGS, ID=20 µA

VDS=80 V, VGS=0 V, T

=25 °C

j

100 - - V

234

- 0.1 1 µA

V

=80 V, VGS=0 V,

DS

T

=125 °C

j

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

VGS=20 V, VDS=0 V

VGS=10 V, ID=20 A,

(TO252)

=10 V, ID=20 A,

V

GS

(TO251)

V

=10 V, ID=20 A,

GS

(TO263)

V

=10 V, ID=20 A,

GS

(TO220, TO262)

Gate resistance

Transconductance

4)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

R

G

g

fs

|VDS|>2|ID|R

I

=20 A

D

DS(on)max

- 10 100

- 1 100 nA

-3749

-3850

-1-

,

11 21 - S

mΩ

Ω

Rev. 1.05 page 2 2008-06-24

IPB50CN10N G IPD49CN10N G

g

IPI50CN10N G IPP50CN10N G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Switching charge

Gate charge total

5)

C

t

Q

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

sw

g

=0 V, VDS=50 V,

V

GS

f =1 MHz

V

=50 V, VGS=10 V,

DD

=20 A, RG=1.6 Ω

I

D

=50 V, ID=20 A,

V

DD

V

=0 to 10 V

GS

- 822 1090 pF

- 120 160

-1015

-1015ns

-46

-1420

-34

-56nC

-34

-57

-1216

Gate plateau voltage

Output charge

V

Q

plateau

oss

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

5)

See figure 16 for gate charge parameter definition

I

S

I

S,pulse

V

SD

t

rr

Q

rr

VDD=50 V, VGS=0 V

=25 °C

T

C

VGS=0 V, IF=20 A, T

=25 °C

j

VR=50 V, IF=IS,

di

/dt =100 A/µs

F

- 5.7 - V

-1217nC

- - 20 A

--80

- 1 1.2 V

- 100 ns

- 140 - nC

Rev. 1.05 page 3 2008-06-24

1 Power dissipation 2 Drain current

P

=f(TC) ID=f(TC); VGS≥10 V

tot

IPB50CN10N G IPD49CN10N G

IPI50CN10N G IPP50CN10N G

50

40

30

[W]

tot

P

20

10

0

0 50 100 150 200

TC [°C]

25

20

15

[A]

D

I

10

5

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TC=25 °C; D =0 Z

D

parameter: t

10

p

2

1 µs

10 µs

=f(tp)

thJC

parameter: D =tp/T

10

100 µs

1

[A]

D

I

10

0

-1

10

-1

10

0

DC

1

10

VDS [V]

1 ms

10 ms

10

0.5

[K/W]

1

0.1

0.2

0.1

0.05

0.02

0.01

single pulse

thJC

Z

2

10

3

tp [s]

Rev. 1.05 page 4 2008-06-24