INFINEON IPP10N03L, IPB10N03L User Manual

DS

DS(on)

D

DS(on)

DS(on)

jmax

AR

GS

j

stg

查询IPB10N03L供应商

OptiMOS Buck converter series

Feature

• N-Channel

• Logic Level

• Low On-Resistance R

• Excellent Gate Charge x R

• Superior thermal resistance

• 175°C operating temperature

• Avalanche rated

product (FOM)

IPP10N03L

IPB10N03L

Product Summary

V
R

max. SMD version 8.9 mΩ

I

P- TO263 -3-2 P- TO220 -3-1

30 V

73 A

• dv/dt rated

• Ideal for fast switching buck converters

Type Package Ordering Code

IPP10N03L P- TO220 -3-1 Q67042-S4040
IPB10N03L P- TO263 -3-2 Q67040-S4346

Marking

10N03L
10N03L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC=25°C

1)

I

D

73

A

63

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=30A, VDD=25V, RGS=25Ω

I

D puls

E

AS

292

25 mJ

Repetitive avalanche energy, limited by T
Reverse diode dv/dt

IS=73A, VDS=24, di/dt=200A/µs, T

jmax

=175°C

2)

E

dv/dt

Gate source voltage V
Power dissipation

TC=25°C

P

Operating and storage temperature T

tot

, T

10

6 kV/µs

±20

107 W

-55... +175

IEC climatic category; DIN IEC 68-1 55/175/56

Page 1

V

°C

2003-01-17

IPP10N03L

thJC

IPB10N03L

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case R
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

3)

R

thJA

- 0.9 1.4 K/W

-

-

-

-

62
40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID=60µA

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=175°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

-

0.01
10

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=36A
VGS=4.5V, ID=36A, SMD version

Drain-source on-state resistance

VGS=10V, ID=36A
VGS=10V, ID=36A, SMD version

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos
2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4

Diagrams are related to straight lead versions

4)

= 1.4K/W the chip is able to carry ID= 88A at 25°C, for detailed

thJC

I

GSS

R

DS(on)

R

DS(on)

- 1 100 nA

-

-

-

-

9.9

9.5

6.8

6.5

13.4

13.1

9.2

8.9

mΩ

Page 2

2003-01-17

IPP10N03L

iss

oss

rss

G

d(on)

r

d(off)

f

gs

gd

(plateau)

SM

SD

rr

rr

IPB10N03L

Electrical Characteristics
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

fs

VDS≥2*ID*R
ID=63A

VGS=0V, VDS=25V,
f=1MHz

DS(on)max

,

32 63 - S

- 1290 1710 pF

- 500 670

- 130 190

- 1.4 - Ω

VDD=15V, VGS=10V,
ID=18A,
RG=4.7Ω

- 7.7 11.6 ns

- 20 30

- 31.5 47.3

- 19 28.5

VDD=15V, ID=36A - 4 5 nC

- 10.6 13.3

g

VDD=15V, ID=36A,
VGS=0 to 5V

- 19 23.8

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q

oss

S

VDS=15V, ID=36A,
VGS=0V

VDD=15V, ID=36A - 3.6 - V

TC=25°C - - 73 A

- 18.2 22.8 nC

- - 292

VGS=0V, IF=73A - 0.96 1.28 V
VR=15V, I

diF/dt=100A/µs

F=lS

,

- 32.9 41.2 ns

- 33 41 nC

Page 3

2003-01-17