INFINEON IPP07N03L, IPB07N03L User Manual

查询IPB07N03L供应商

OptiMOS Buck converter series

Feature

• N-Channel

• Logic Level

• Low On-Resistance R

DS(on)

• Excellent Gate Charge x R

• Superior thermal resistance

• 175°C operating temperature

• Avalanche rated

DS(on)

product (FOM)

IPP07N03L

IPB07N03L

Product Summary

V

DS

R
I

max. SMD version 5.9 mΩ

DS(on)

D

P- TO263 -3-2 P- TO220 -3-1

30 V

80 A

• dv/dt rated

• Ideal for fast switching buck converters

Type Package Ordering Code

IPP07N03L P- TO220 -3-1 Q67042-S4051
IPB07N03L P- TO263 -3-2 Q67042-S4082

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC = 25°C ,1)

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=20A, VDD=25V, RGS=25Ω

1)

I

D

I

D puls

E

AS

Marking

07N03L
07N03L

80
80

320

30 mJ

A

Repetitive avalanche energy, limited by T

Reverse diode dv/dt

IS=80A, VDS=24V, di/dt=200A/µs, T

Gate source voltage V
Power dissipation

TC=25°C

Operating and storage temperature T
IEC climatic category; DIN IEC 68-1 55/175/56

jmax

=175°C

2) E

jmax

Page 1

AR

dv/dt 6 kV/µs

GS

P

tot

, T

j

stg

15

±20

150 W

-55... +175

V

°C

2002-10-17

IPP07N03L

IPB07N03L

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

3)

R

R

thJC

thJA

- 0.68 1 K/W

-

-

-

-

62
40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID = 80 µA

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

-

0.01
10

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=50A
VGS=4.5V, ID=50A, SMD version

Drain-source on-state resistance

VGS=10V, ID=50A
VGS=10V, ID=50A, SMD version

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos
2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4

Diagrams are related to straight lead versions

4)

= 1K/W the chip is able to carry ID= 123A at 25°C, for detailed

thJC

I

GSS

R

DS(on)

R

DS(on)

- 1 100 nA

-

-

-

-

7

6.6

5

4.6

10

9.7

6.2

5.9

mΩ

Page 2

2002-10-17

IPP07N03L

IPB07N03L

Electrical Characteristics
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q

Gate charge total Q

fs

iss

oss

rss

G

d(on)

r

d(off)

f

gs

gd

g

VDS≥2*ID*R
ID=80A

VGS=0V, VDS=25V,
f=1MHz

DS(on)max

,

44 88 - S

- 1900 2350 pF

- 740 990

- 175 265

- 2.2 - Ω

VDD=15V, VGS=10V,

ID=20A,

RG=3.6Ω

- 10.4 15.6 ns

- 23 35

- 73 109

- 61 91

VDD=15V, ID=20A - 5 7 nC

- 16 25

VDD=15V, ID=20A,
VGS=0 to 5V

- 27 34

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed

I

Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

oss

(plateau)

S

SM

SD

rr

rr

VDS=15V, ID=20A,
VGS=0V

VDD=15V, ID=20A - 3.1 - V

- 26.4 33 nC

TC=25°C - - 80 A

- - 320

VGS=0V, IF=80A - 0.9 1.3 V
VR=15V, I

diF/dt=100A/µs

F=lS

,

- 41 51 ns

- 46 58 nC

Page 3

2002-10-17