INFINEON IPP04N03L, IPB04N03L User Manual

DS

DS(on)

D

DS(on)

jmax

AR

GS

j

stg

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OptiMOS Buck converter series

Feature

• N-Channel

• Logic Level

• Excellent Gate Charge x R

• Superior thermal resistance

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

product (FOM)

IPP04N03L

IPB04N03L

Product Summary

V
R

max. SMD version 3.9 mΩ

I

P- TO263 -3-2 P- TO220 -3-1

30 V

80 A

• Ideal for fast switching buck converter

Type Package Ordering Code

IPP04N03L P- TO220 -3-1 Q67042-S4108
IPB04N03L P- TO263 -3-2 Q67042-S4107

Marking

04N03L
04N03L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC=25°C

1)

1)

I

D

80

A

80

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=55A, VDD=25V, RGS=25Ω

I

D puls

E

AS

320

60 mJ

Repetitive avalanche energy, limited by T
Reverse diode dv/dt

IS=80A, VDS=24V, di/dt=200A/µs, T

jmax

=175°C

2)

E

dv/dt

Gate source voltage V
Power dissipation

TC=25°C

P

Operating and storage temperature T

tot

, T

18

6 kV/µs

±20

188 W

-55... +175

IEC climatic category; DIN IEC 68-1 55/175/56

Page 1

V

°C

2003-01-17

IPP04N03L

thJC

IPB04N03L

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case R
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

3)

R

thJA

- 0.51 0.8 K/W

-

-

-

-

62
40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID = 130 µA

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

-

0.01
10

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=45A
VGS=4.5V, ID=45A, SMD version

Drain-source on-state resistance

VGS=10V, ID=45A
VGS=10V, ID=45A, SMD version

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos
2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4

Diagrams are related to straight lead versions

4)

= 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed

thJC

I

GSS

R

DS(on)

R

DS(on)

- 1 100 nA

-

-

-

-

4.9

4.6

3.6

3.2

6.2

5.9

4.2

3.9

mΩ

Page 2

2003-01-17

IPP04N03L

iss

oss

rss

G

d(on)

r

d(off)

f

gs

gd

(plateau)

SM

SD

rr

rr

IPB04N03L

Electrical Characteristics
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

fs

VDS≥2*ID*R
ID=80A

VGS=0V, VDS=25V,
f=1MHz

DS(on)max

,

11.5 23 - S

- 2930 3900 pF

- 1150 1520

- 270 420

- 1.9 - Ω

VDD=15V, VGS=10V,
ID=20A,
RG=2.2Ω

- 12.7 19 ns

- 20 30

- 54.2 81.3

- 18.9 28.3

VDD=15V, ID=40A - 9.9 12.4 nC

- 23 35

g

VDD=15V, ID=40A,
VGS=0 to 5V

- 41.8 52

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q

oss

S

VDS=15V, ID=40A,
VGS=0V

VDD=15V, ID=40A - 3.2 - V

TC=25°C - - 80 A

- 40.4 50 nC

- - 320

VGS=0V, IF=80A - 0.9 1.2 V
VR=-V, I

diF/dt=100A/µs

F=lS

,

- 50 62 ns

- 61 76 nC

Page 3

2003-01-17