INFINEON IPA60R299CP User Manual
IPA60R299CP
CoolMOS® Power Transistor
Features
• Lowest figure-of-merit R
• Ultra low gate charge 6.6
ONxQg
Product Summary
V
@ T
DS
j,max
R
DS(on),max@Tj
Q
g,typ
= 25°C 0.299
• Extreme dv/dt rated
• High peak current capability
1)
• Qualified according to JEDEC
for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type Package Ordering Code Marking
IPA60R299CP PG-TO220FP SP000096438 6R299P
650 V
Ω
22 nC
PG-TO220FP
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
=25 °C, unless otherwise specified
j
2)
I
D
TC=25 °C
T
3)
AR
AR
3),4)
3),4)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=4.4 A, VDD=50 V
ID=4.4 A, VDD=50 V
V
V
GS
static V
AC (f >1 Hz)
P
tot
, T
T
j
TC=25 °C
stg
=100 °C
C
=0...480 V
DS
Value
11
7
34
290 mJ
0.44
4.4
50
±20
±30
33
-55 ... 150
A
A
V/ns
W
°C
Mounting torque M2.5 screws 50 Ncm
Rev. 2.1 page 1 2007-11-30
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPA60R299CP
Parameter Symbol Conditions Unit
2)
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
3)
5)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
11
34
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 80
1.6 mm (0.063 in.)
from case for 10 s
- - 3.8 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=0,44 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=6.6 A,
T
=25 °C
j
V
=10 V, ID=6.6 A,
GS
T
=150 °C
j
600 - - V
2.5 3 3.5
--1µA
-10-
- - 100 nA
- 0.27 0.299
- 0.73
f =1 MHz, open drain - 1.9 -
Ω
Ω
Rev. 2.1 page 2 2007-11-30
IPA60R299CP
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
6)
related
Effective output capacitance, time
7)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
V
=0 V, VDS=100 V,
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=6,6 A,
GS
=4,3 Ω
R
G
- 1100 - pF
-60-
-46-
- 120 -
-10-ns
-5-
-40-
-5-
Gate Charge Characteristics
Gate to source charge
Q
gs
-5-nC
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
V
gd
g
plateau
V
=400 V, ID=6.6 A,
DD
V
=0 to 10 V
GS
- 7.6 -
-2229
- 5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width tp limited by T
4)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
5)
ISD<=ID, di/dt<=200A/µs, V
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
7)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
DClink
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
VGS=0 V, IF=6.6 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, Tj<T
, identical low side and high side switch.
jmax
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 0.9 1.2 V
- 300 - ns
- 3.9 - µC
-26-A
DSS.
DSS.
Rev. 2.1 page 3 2007-11-30
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