INFINEON IPA50R350CP User Manual
IPA50R350CP
CoolMOSTM Power Transistor
Features
• Lowest figure of merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard and softswitching SMPS topologies
• CCM PFC for Notebook adapter, PDP and LCD TV
• PWM for Notebook adapter, PDP and LCD TV
ON
x Q
g
0)
for target applications
Product Summary
V
DS @Tjmax
R
DS(on),max
Q
g,typ
550 V
0.350
19 nC
TO220 Full PAK
Ω
Type Package Marking
IPA50R350CP PG-TO220FP 5R350CP
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
=25 °C, unless otherwise specified
j
1)
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=3.7 A, VDD=50 V
ID=3.7 A, VDD=50 V
V
V
GS
static V
AC (f>1 Hz)
P
tot
, T
T
j
TC=25 °C
stg
=100 °C
C
=0...400 V
DS
Value
10
6
22
246 mJ
0.37
3.7
50
±20
±30
32
-55 ... 150
A
A
V/ns
W
°C
Mounting torque M2.5 screws 60 Ncm
Rev. 2.0 page 1 2007-11-20
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPA50R350CP
Parameter Symbol Conditions Unit
1)
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
5.6
22
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 1.4 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=0.37 mA
VDS=500 V, VGS=0 V,
T
=25 °C
j
V
=500 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=5.6 A,
T
=25 °C
j
V
=10 V, ID=5.6 A,
GS
T
=150 °C
j
500 - - V
2.5 3 3.5
--1µA
-10-
- - 100 nA
- 0.32 0.35
- 0.80 -
f =1 MHz, open drain - 2.2 -
Ω
Ω
Rev. 2.0 page 2 2007-11-20
IPA50R350CP
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 400 V
V
=400 V,
DD
V
=10 V, ID=5.6 A,
GS
=30.9 Ω
R
G
- 1020 - pF
-46-
-43-
-92-
-35-ns
-14-
-80-
- 12.0 -
Gate Charge Characteristics
Gate to source charge
Q
gs
-4-nC
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
V
gd
g
plateau
=400 V, ID=5.6 A,
V
DD
V
=0 to 10 V
GS
-6-
-1925
- 5.2 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
0)
J-STD20 and JESD22
1)
Limited only by T
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD≤ID, di /dt ≤400A/µs, V
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
j,max
DClink
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
VGS=0 V, IF=5.6 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, Tj<T
, identical low and high side switch
jmax
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 0.9 1.2 V
- 250 - ns
- 2.3 - µC
-19-A
DSS.
DSS.
Rev. 2.0 page 3 2007-11-20
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