Infineon BSM20GD60DN2 Data Sheet
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
BSM 20 GD 60 DN2
Type
V
CE
I
C
Package Ordering Code
BSM 20 GD 60 DN2 600V 20A ECONOPACK 2 C67076-A2511-A67
BSM 20 GD 60DN2E3224 600V 20A ECONOPACK 2K C67070-A2511-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 40 °C
C
Pulsed collector current,
T
= 40 °C
C
t
p
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
Symbol Values Unit
V
V
CE
CGR
600 V
600
V
I
GE
C
± 20
A
20
I
Cpuls
40
P
tot
W
90
T
j
T
stg
+ 150 °C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
thJC
R
thJCD
V
is
≤
1.6 K/W
≤
1.8
2500 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Jan-10-1997
http://store.iiic.cc/
BSM 20 GD 60 DN2
Electrical Characteristics
, at Tj = 25 °C, unless otherwise specified
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 0.5 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 20 A,
I
C
= 20 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
V
CE
= 600 V,
V
= 0 V,
GE
= 25 °C
T
j
Gate-emitter leakage current
V
GE
= 25 V,
V
CE
= 0 V
AC Characteristics
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
-
-
2.1
2.2
2.7
2.8
mA
- - 1
I
GES
nA
- - 100
Transconductance
V
CE
= 20 V,
= 20 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
5.5 - pF
- 1100 -
- 120 -
- 66 -
Semiconductor Group
2 Jan-10-1997
http://store.iiic.cc/
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