Infineon BSM200GB170DLC Data Sheet

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM 200 GB 170 DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collctor current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

= 25°C V

T

vj

T

= 80 °C I

C

= 25 °C I

T

C

t

= 1 ms, TC= 80°C I

P

= 25°C, Transistor P

T

C

= 1 ms I

t

p

CES

C,nom.

C

CRM

tot

V

GES

I

F

FRM

1700 V

200 A

400 A

400 A

1660 W

+/- 20V V

200 A

400 A

Grenzlastintegral der Diode

2

I

t - value, Diode

Isolations-Prüfspannung
insulation test voltage

V

= 0V, tp = 10ms, Tvj = 125°C

R

RMS, f = 50 Hz, t = 1 min.

Charakteristische Werte / Characteristic values

Transistor / Transistor

I

= 200A, VGE = 15V, Tvj = 25°C V

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Gateladung
gate charge

Eingangskapazität
input capacitance

Rückwirkungskapazität
reverse transfer capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

C

= 200A, VGE = 15V, Tvj = 125°C

I

C

I

= 9mA, VCE = VGE, Tvj = 25°C V

C

= -15V ... +15V Q

V

GE

f = 1MHz,T

f = 1MHz,T

V

CE

= 25°C,VCE = 25V, VGE = 0V C

vj

= 25°C,VCE = 25V, VGE = 0V C

vj

= 1700V, VGE = 0V, Tvj = 25°C I

V

2

I

t

ISOL

min. typ. max.

CE sat

GE(th)

G

ies

res

CES

- 2,6 3,2 V

- 3,1 3,6 V

4,5 5,5 6,5 V

- 2,4 - µC

-15-nF

- 0,7 - nF

--5mA

11

k A2s

3,4 kV

Gate-Emitter Reststrom
gate-emitter leakage current

= 0V, VGE = 20V, Tvj = 25°C I

V

CE

prepared by: Alfons Wiesenthal date of publication: 2002-07-04

approved by: Dr. Schilling revision: 3

1(8)

GES

- - 400 nA

BSM200GB170DLC_3.xls

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM 200 GB 170 DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

= 200A, VCE = 900V

I

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

Modulinduktivität
stray inductance module

C

V

= ±15V, RG= 7,5W, Tvj = 25°C

GE

V

= ±15V, RG = 7,5W, Tvj = 125°C

GE

= 200A, VCE = 900V

I

C

V

= ±15V, RG= 7,5W, Tvj = 25°C

GE

= ±15V, RG = 7,5W, Tvj = 125°C

V

GE

= 200A, VCE = 900V

I

C

V

= ±15V, RG= 7,5W, Tvj = 25°C

GE

V

= ±15V, RG = 7,5W, Tvj = 125°C

GE

= 200A, VCE = 900V

I

C

V

= ±15V, RG= 7,5W, Tvj = 25°C

GE

= ±15V, RG = 7,5W, Tvj = 125°C

V

GE

= 200A, VCE = 900V, VGE = ±15V

I

C

R

= 7,5W, Tvj = 125°C, Ls= 60nH

G

= 200A, VCE = 900V, VGE = ±15V

I

C

R

= 7,5W, Tvj = 125°C, Ls= 60nH

G

£ 10µsec, VGE£ 15V, RG = 7,5W

t

P

T

£125°C, VCC=1000V, V

Vj

Anschlüsse / terminals: 2 - 3

CEmax=VCES-LsCE

·di/dt

min. typ. max.

t

d,on

t

r

t

d,off

t

f

E

on

E

off

I

SC

L

sCE

- 0,10 - µs

- 0,10 - µs

- 0,10 - µs

- 0,10 - µs

- 0,80 - µs

- 0,90 - µs

- 0,03 - µs

- 0,03 - µs

-90-mJ

-65-mJ

- 800 - A

- 20 - nH

Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip

pro Zweig / per arm, T

Charakteristische Werte / Characteristic values

Diode / Diode

I

= 200A, VGE = 0V, Tvj = 25°C V

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

F

= 200A, VGE = 0V, Tvj = 125°C

I

F

I

= 200A, - diF/dt = 2300A/µs

F

V

= 900V, VGE = -15V, Tvj = 25°C I

R

= 900V, VGE = -15V, Tvj = 125°C

V

R

= 200A, - diF/dt = 2300A/µs

I

F

V

= 900V, VGE = -15V, Tvj = 25°C Q

R

= 900V, VGE = -15V, Tvj = 125°C

V

R

= 200A, - diF/dt = 2300A/µs

I

F

V

= 900V, VGE = -15V, Tvj = 25°C E

R

= 900V, VGE = -15V, Tvj = 125°C

V

R

= 25°C R

C

CC'+EE'

F

RM

r

rec

- 0,60 -

mW

min. typ. max.

- 2,1 2,5 V

- 2,1 2,5 V

- 160 - A

- 200 - A

-60-µC

- 105 - µC

-25-mJ

-50-mJ

2(8)

BSM200GB170DLC_3.xls

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM 200 GB 170 DLC

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur
maximum junction temperature

Betriebstemperatur
operation temperature

Lagertemperatur
storage temperature

Transistor / transistor, DC

Diode/Diode, DC - - 0,150 K/W

pro Modul / per module

= 1 W/m*K / l

l

Paste

grease

= 1 W/m*K

T

R

R

T

T

min. typ. max.

thJC

thCK

vj max

vjop

stg

- - 0,075 K/W

- 0,010 - K/W

- - 150 °C

-40 - 125 °C

-40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage
case, see appendix

Innere Isolation
internal insulation

Kriechstrecke
creepage distance

Luftstrecke
clearance

CTI
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung
mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque

Gewicht
weight

Schraube / screw M6

Anschlüsse / terminals M6

M3Nm-6

M 2,5 - 5

G 340 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

Al

2O3

20 mm

11 mm

425

Nm

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8)

BSM200GB170DLC_3.xls