Infineon BCV62A, BCV62B, BCV62C Schematic

PNP Silicon Double Transistor

g

• To be used as a current mirror

BCV62

• Good thermal coupling and V

• High current gain

matching

BE

3

4

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

C1 (2)

E1 (3) E2 (4)

C2 (1)

Tr.2Tr.1

EHA00013

Type Marking Pin Configuration Package

BCV62A

BCV62B

BCV62C

3Js

3Ks

3Ls

1 = C2

2 = C1

3 = E1

4 = E2

SOT143

Maximum Ratings

2

1

Parameter

Collector-emitter voltage

Symbol Value Unit

V

(transistor T1)

Collector-base voltage (open emitter)

V

(transistor T1)

Emitter-base voltage V

DC collector current I

Peak collector current I

Base peak current (transistor T1) I

Total power dissipation, TS = 99 °C P

Junction temperature T

Storage temperature T

Thermal Resistance

Junction - soldering point

1)

R

CEO

CBO

EBS

C

CM

BM

tot

j

st

thJS

30 V

30

6

100 mA

200

300 mW

150 °C

-65 ... 150

≤170 K/W

1

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

1

2011-07-25

Electrical Characteristics at TA = 25°C, unless otherwise specified

BCV62

Parameter

DC Characteristics of T1

Collector-emitter breakdown voltage

= 10 mA, IB = 0

I

C

Collector-base breakdown voltage

= 10 µA, IE = 0

I

C

Emitter-base breakdown voltage

= 10 µA, IC = 0

I

E

Collector cutoff current

= 30 V, IE = 0

V

CB

Collector cutoff current

= 30 V, IE = 0 , TA = 150 °C

V

CB

DC current gain 1)

= 0.1 mA, VCE = 5 V

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

h

FE

30 - - V

30 - -

6 - -

- - 15 nA

- - 5 µA

100 - -

-

DC current gain 1)

= 2 mA, VCE = 5 V

I

C

Collector-emitter saturation voltage1)

= 10 mA, IB = 0.5 mA

I

C

= 100 mA, IB = 5 mA

I

C

Base-emitter saturation voltage 1)

= 10 mA, IB = 0.5 mA

I

C

= 100 mA, IB = 5 mA

I

C

Base-emitter voltage 1)

= 2 mA, VCE = 5 V

I

C

= 10 mA, VCE = 5 V

I

C

1) Pulse test: t ≤ 300µs, D = 2%

BCV62A

BCV62B

BCV62C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

125

220

420

-

600

-

180

290

520

75

250

700

850

650

-

220

475

800

300

650

-

750

820

mV

2

2011-07-25

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCV62

Parameter

DC Characteristics

Base-emitter forward voltage

I

= 10 µA

E

= 250 mA

I

E

Matching of transistor T1 and transistor T2

at I

= 0.5mA and V

E2

= 25 °C

T

A

= 150 °C

T

A

CE1

= 5V

Thermal coupling of transistor T1 and

1)

transistor T2

Maximum current of thermal stability of I

T1: VCE = 5V

C1

AC characteristics of transistor T1

Transition frequency

I

= 10 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

Symbol Values Unit

min. typ. max.

V

BES

IC1 / I

I

E2

f

T

C

cb

C

eb

F

C2

0.4

-

0.7

-

1.8

-

1.3

- 5 - mA

- 250 - MHz

- 1.5 - pF

- 8 -

- 2 - dB

V

-

I

= 200 µA, VCE = 5 V, RS = 2 kΩ,

C

f = 1 kHz, ∆ f = 200 Hz

Short-circuit input impedance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit reverse voltage transf.ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Short-circuit forward current transf.ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit output admittance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm

h

11e

12e

21e

22e

- 4.5 -

- 2 -

100 - 900

- 30 -

3

kΩ

-4

10

-

µS

2011-07-25

Infineon BCV62A, BCV62B, BCV62C Schematic [ru]