INFINEON BCV62 User Manual

PNP Silicon Double Transistor

g



To be used as a current mirror



Good thermal coupling and VBE matching



High current gain



Low collector-emitter saturation voltage

C1 (2)

C2 (1)

Tr.2Tr.1

4

3

BCV62

1

2

VPS05178

E1 (3) E2 (4)

EHA00013

Type Marking Pin Configuration Package

BCV62A
BCV62B
BCV62C

3Js
3Ks
3Ls

1 = C2
1 = C2
1 = C2

2 = C1
2 = C1
2 = C1

3 = E1
3 = E1
3 = E1

4 = E2
4 = E2
4 = E2

SOT143
SOT143
SOT143

Maximum Ratings
Parameter

Collector-emitter voltage

Symbol Value Unit

V

CEO

30 V

(transistor T1)
Collector-base voltage (open emitter)

V

CBO

30

(transistor T1)
Emitter-base voltage

DC collector current I
Peak collector current I

V

C
CM

EBS

6
100 mA
200

Base peak current (transistor T1)

I

Total power dissipation, TS = 99 °C P
Junction temperature T
Storage temperature T

BM

tot
j
st

200
300 mW
150 °C

-65 ... 150

Thermal Resistance

Junction - soldering point

1

For calculation of R

thJA

1)

please refer to Application Note Thermal Resistance

R

thJS



170 K/W

1 Jul-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified

BCV62

Parameter

DC Characteristics of T1

Collector-emitter breakdown voltage

= 10 mA, IB = 0

I

C

Collector-base breakdown voltage

I

= 10 µA, IB = 0

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector cutoff current

V

= 30 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

= 0.1 mA, VCE = 5 V

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

h

FE

30 - - V

30 - -

6 - -

- - 15 nA

- - 5 µA

100 - - -

DC current gain 1)

I

= 2 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

= 100 mA, IB = 5 mA

I

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

= 100 mA, IB = 5 mA

I

C

Base-emitter voltage 1)

= 2 mA, VCE = 5 V

I

C

= 10 mA, VCE = 5 V

I

C

BCV62A
BCV62B
BCV62C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

125
220
420

-

-

-

-

600

-

180
290
520

75

250

700
850

650

-

220
475
800

300
650

-

-

750
820

mV

1) Pulse test: t ≤ 300µs, D = 2%

2 Jul-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCV62

Parameter

DC Characteristics

Base-emitter forward voltage

= 10 µA

I

E

= 250 mA

I

E

Matching of transistor T1 and transistor T2

= 0.5mA and V

at I

E2

= 25 °C

T

A

= 150 °C

T

A

CE1

= 5V

Thermal coupling of transistor T1 and

1)

transistor T2
Maximum current of thermal stability of I

T1: VCE = 5V

C1

AC characteristics of transistor T1

Transition frequency

I

= 10 mA, VCE = 5 V, f = 100 MHz

C

Symbol Values Unit

min. typ. max.

V

BES

IC1 / I

I

E2

f

T

C2

0.4

-

-

0.7

0.7

- 5 - mA

- 250 - MHz

-

-

-

-

-

-

1.8

-

1.3

1.3

V

-

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 200 µA, VCE = 5 V, RS = 2 k,

C

f = 1 kHz,



f = 200 Hz

Short-circuit input impedance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit reverse voltage transf.ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Short-circuit forward current transf.ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit output admittance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

C

C

cb

eb

- 3 - pF

- 8 -

F - 2 - dB

h

h

h

h

11e

12e

21e

22e

- 4.5 -

- 2 - 10

100 - 900 -

- 30 -

k





-4

S

1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm

3 Jul-11-2001