Infineon BCV61A, BCV61B, BCV61C Schematic [ru]
NPN Silicon Double Transistor
g
To be used as a current mirror
Good thermal coupling and VBE matching
High current gain
Low collector-emitter saturation voltage
C1 (2)
C2 (1)
Tr.2Tr.1
4
3
BCV61
1
2
VPS05178
E1 (3) E2 (4)
EHA00012
Type Marking Pin Configuration Package
BCV61A
BCV61B
BCV61C
1Js
1Ks
1Ls
1 = C2
1 = C2
1 = C2
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
V
CEO
ValueSymbol Unit
30 VCollector-emitter voltage
(transistor T1)
V
CBO
30Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current mA100
Peak collector current
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature °C150
Storage temperature
V
I
C
I
CM
I
BM
P
T
T
EBS
tot
j
st
6
200
200
300 mW
-65 ... 150
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
R
thJS
170 K/W
1 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified
BCV61
Parameter
DC Characteristics of T1
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
I
= 10 µA, IB = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 30 V, IE = 0
CB
Collector cutoff current
V
= 30 V, IE = 0 , TA = 150 °C
CB
DC current gain 1)
= 0.1 mA, VCE = 5 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
h
FE
6 --
- - nA15
-30 V-
- -30
-- µA5
- -100 -
DC current gain 1)
I
= 2 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
= 100 mA, IB = 5 mA
I
C
Base-emitter saturation voltage 1)
I
= 10 mA, IB = 0.5 mA
C
= 100 mA, IB = 5 mA
I
C
Base-emitter voltage 1)
= 2 mA, VCE = 5 V
I
C
= 10 mA, VCE = 5 V
I
C
BCV61A
BCV61B
BCV61C
h
FE
V
CEsat
V
BEsat
V
BE(ON)
110
200
420
-
-
-
-
580
-
180
290
520
90
200
700
900
660
-
220
450
800
250
600
-
-
700
770
mV
1) Pulse test: t ≤ 300µs, D = 2%
2 Jul-10-2001
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