INFINEON BCV61 User Manual

NPN Silicon Double Transistor

g

• To be used as a current mirror

BCV61

3

• Good thermal coupling and V

matching

BE

4

• High current gain

• Low collector-emitter saturation voltage

C1 (2)

C2 (1)

1

Tr.2Tr.1

E1 (3) E2 (4)

Type Marking Pin Configuration Package

BCV61B

BCV61C

1Ks

1Ls

1 = C2

1 = C2

2 = C1

2 = C1

Maximum Ratings

Parameter

Collector-emitter voltage

(transistor T1)

EHA00012

3 = E1

3 = E1

4 = E2

4 = E2

SOT143

SOT143

Symbol Value Unit

V

CEO

30 V

2

VPS05178

Collector-base voltage (open emitter)

V

(transistor T1)

Emitter-base voltage V

DC collector current I
Peak collector current I

Base peak current (transistor T1) I

Total power dissipation, TS = 99 °C

P

Junction temperature T
Storage temperature T

Thermal Resistance

Junction - soldering point

1

For calculation of R

thJA

1)

please refer to Application Note Thermal Resistance

R

CBO

EBS

C

CM

BM

tot

j

st

thJS

30

6

100 mA

200

200

300 mW

150 °C

-65 ... 150

≤170 K/W

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Electrical Characteristics at TA = 25°C, unless otherwise specified

BCV61

Parameter

DC Characteristics of T1

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector cutoff current

V

= 30 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

I

= 0.1 mA, VCE = 5 V

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

h

FE

30 - - V

30 - -

6 - -

- - 15 nA

- - 5 µA

100 - -

-

DC current gain 1)

I

= 2 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

BCV61B
BCV61C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

200

420

-

-

-

-

580

-

290

520

90

200

700

900

660

-

450

800

250

600

-

-

700

770

mV

1) Pulse test: t ≤ 300µs, D = 2%

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Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCV61

Parameter

Characteristics

Base-emitter forward voltage

= 10 µA

I

E

= 250 mA

I

E

Matching of transistor T1 and transistor T2

at I

E2

= 25 °C

T

A

= 150 °C

T

A

= 0.5mA and V

CE1

= 5V

Thermal coupling of transistor T1 and

1)

transistor T2

Maximum current of thermal stability of I

T1: VCE = 5V

C1

AC characteristics for transistor T1

Transition frequency

Symbol Values Unit

min. typ. max.

V

BES

IC1 / I

I

E2

f

T

C2

0.4

-

-

0.7

0.7

-

-

1.8

-

-

-

1.3

1.3

- 5 - mA

- 250 - MHz

V

-

-

-

I

= 10 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 200 µA, VCE = 5 V, RS = 2 kΩ,

C

f = 1 kHz, ∆ f = 200 Hz
Short-circuit input impedance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit reverse voltage transf.ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Short-circuit forward current transf.ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit output admittance

C

C

cb

eb

- 0.95 - pF

- 9 -

F - 2 - dB

h

h

h

h

11e

12e

21e

22e

- 4.5 -

- 2 - 10

100 - 900

- 30 -

kΩ

-

µS

-4

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm

3 2005-06-09