Infineon BCR555 Schematic [ru]

PNP Silicon Digital Transistor

g



Switching circuit, inverter, interface circuit,

driver circuit



Built in bias resistor (R1=2.2k, R2=10k)

BCR555

3

C
3

R

1

R

2

21
EB

EHA07183

1

Type Marking Pin Configuration Package

BCR555 XDs 1 = B 2 = E 3 = C SOT23

Maximum Ratings
Parameter

Collector-emitter voltage
Collector-base voltage
Emitter-base voltage 5
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C P

Junction temperature

Symbol Value Unit

V

CEO

V
V
V
I

T
T

C

CBO
EBO
i(on)

tot
j
st

50

12

500 mA

150 °C

-65 ... 150Storage temperature

2

VPS05161

V50

mW330

Thermal Resistance

Junction - soldering point

1

For calculation of R

thJA

1)

please refer to Application Note Thermal Resistance

R

thJS



215 K/W

Jul-23-20011

Electrical Characteristics at TA=25°C, unless otherwise specified

BCR555

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 100 µA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IB = 0

C

V

= 40 V, IE = 0

CB

V

= 5 V, IC = 0

EB

I

= 50 mA, VCE = 5 V

C

I

= 50 mA, IB = 2.5 mA

C

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

FE

V

CEsat

ValuesSymbol Unit

typ. max.min.

50 -

-Collector cutoff current

- - mAEmitter cutoff current

70 - --DC current gain 1)

-

- V50 -

-

- 100 nA

0.65

- 0.3 VCollector-emitter saturation voltage1)

I

= 100 µA, VCE = 5 V

C

I

= 10 mA, VCE = 0.3 V

C

Input resistor

AC Characteristics

I

= 50 mA, VCE = 5 V, f = 100 MHz

C

V

i(off)

V

i(on)

R

1

R1/R

f

T

0.4Input off voltage

0.5 -Input on Voltage

1.5 2.2

2

0.19

- 1 V

1.4

2.9

0.22 0.24Resistor ratio -

k



- - MHz150Transition frequency

1) Pulse test: t < 300s; D < 2%

Jul-23-20012