Infineon BCR189, BCR189F, BCR189L3, BCR189T Schematic [ru]
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
BCR189...
• Built in bias resistor (R
= 22kΩ)
1
BCR189/F/L3
BCR189T
C
3
R
1
12
BE
EHA07180
Type Marking Pin Configuration Package
BCR189
W2s
1=B
2=E
3=C
-
-
-
SOT23
BCR189F
BCR189L3
BCR189T
W2s
W2
W2s
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSLP-3
TSLP-3-4
SC75
1
Aug-29-2003
Maximum Ratings
BCR189...
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Input on voltage V
Collector current I
Total power dissipation-
BCR189, T
BCR189F, T
BCR189L3, T
BCR189T, T
≤ 102°C
S
≤ 128°C
S
≤ 135°C
S
≤ 109°C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol Value Unit
R
BCR189
CEO
CBO
EBO
i(on)
C
tot
j
stg
thJS
50 V
50
5
30
100 mA
200
250
250
250
150 °C
150 ... -65
≤ 240
mW
K/W
BCR189F
BCR189L3
BCR189T
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
≤ 90
≤ 60
≤ 165
2
Aug-29-2003
BCR189...
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector-base cutoff current
V
= 40 V, IE = 0
CB
DC current gain1)
I
= 5 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0,5 mA
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CEsat
50 - -
50 - -
5 - -
- - 100 nA
120 - 630 -
- - 0,3 V
V
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 2 mA, VCE = 0,3 V
C
V
V
Input resistor R
AC Characteristics
Transition frequency
I
= 10 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1
Pulse test: t < 300µs; D < 2%
f
C
i(off)
i(on)
1
T
cb
0,4 - 0,8
0,5 - 1,1
15 22 29 kΩ
- 200 - MHz
- 3 - pF
3
Aug-29-2003
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