Infineon BCR185U Schematic [ru]
PNP Silicon Digital Transistor Array
g
BCR185U
4
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
=10k, R2=47k)
1
C1 B2 E2
6 54
R
2
TR1
R
1
R
2
TR2
R
1
321
C2B1E1
EHA07173
Type Marking Pin Configuration Package
BCR185U WNs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
5
6
1
VPW09197
SC74
3
2
Maximum Ratings
Parameter
Collector-emitter voltage 50 V
Emitter-base voltage
Input on Voltage
Junction temperature 150 °C
Symbol Value Unit
V
CEO
V
V
V
I
P
T
T
C
CBO
EBO
i(on)
tot
j
st
50Collector-base voltage
6
20
100 mADC collector current
250Total power dissipation, TS = 118 °C
mW
-65 ... 150Storage temperature
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
R
thJS
130 K/W
Jul-12-20011
Electrical Characteristics at TA=25°C, unless otherwise specified
BCR185U
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 100 µA, IB = 0
I
C
= 10 µA, IB = 0
I
C
= 10 µA, IC = 0
I
E
= 40 V, IE = 0
V
CB
Emitter cutoff current
= 6 V, IC = 0
V
EB
= 5 mA, VCE = 5 V
I
C
Symbol UnitValues
min. max.typ.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
50
- - - VEmitter-base breakdown voltage
-
70 -DC current gain 1)
-
- 100 nACollector cutoff current
-
-50 V
--Collector-base breakdown voltage
167 µA-
-
-
= 10 mA, IB = 0.5 mA
I
C
Input off voltage
= 100 µA, VCE = 5 V
I
C
= 2 mA, VCE = 0.3 V
I
C
Input resistor
AC Characteristics
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
= 10 V, f = 1 MHz
V
CB
V
CEsat
V
i(off)
V
i(on)
R
1
R1/R
f
T
C
cb
- -
0.5
-Input on Voltage
1.40.5
13107
2
0.19
-
-Collector-base capacitance
200 -Transition frequency
3 - pF
V0.3Collector-emitter saturation voltage1)
1-
V
k
-0.240.21Resistor ratio
MHz
1) Pulse test: t < 300s; D < 2%
Jul-12-20012
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