Infineon BCR169W Schematic [ru]
PNP Silicon Digital Transistor
g
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1 = 4.7k)
BCR169W
3
C
3
1
R
1
12
BE
EHA07180
VSO05561
Type Marking Pin Configuration Package
BCR169W WSs 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage 5
Input on Voltage
DC collector current
Total power dissipation, TS = 124 °C P
Junction temperature
Symbol Value Unit
V
CEO
V
V
V
I
T
T
C
CBO
EBO
i(on)
tot
j
st
50
15
100 mA
150 °C
-65 ... 150Storage temperature
2
V50
mW250
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
105 K/W
Dec-13-20011
BCR169W
A
Electrical Characteristics at T
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 40 V, IE = 0
CB
DC current gain 1)
I
= 5 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CEsat
50 - - V
50 - -
5 - -
- - 100 nA
120 - 630 -
- - 0.3 V
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on Voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor
AC Characteristics
I
= 10 mA, VCE = 5 V, f = 100 MHz
C
V
= 10 V, f = 1 MHz
CB
V
V
R
f
C
T
i(off)
i(on)
1
cb
0.4 - 0.8
0.5 - 1.1
3.2 4.7 6.2
- - MHz200Transition frequency
- 3 pFCollector-base capacitance
-
k
1) Pulse test: t < 300s; D < 2%
Dec-13-20012
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