Infineon BAT63-07WE6811 Schematic [ru]
Silicon Schottky Diode
Low barrie diode for detectors up to GHz
frequencies
For high-speed switching applications
Zero bias detector diode
BAT63-07W
34
D2
D1
BAT63-07WE6811
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration L
BAT63-07WE6811
SOT343 parallel pair 1.6 63s
(nH) Marking
S
Maximum Ratings
Parameter
Diode reverse voltage V
Forward current I
Total power dissipation
T
103 °C
S
Junction temperature T
Storage temperature T
Symbol Value Unit
8 V
100 mA
100 mW
150 °C
-55 ... 150
P
R
F
tot
j
stg
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
Symbol Value Unit
R
thJS
1
470
Jul-24-2002
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAT63-07WE6811
Parameter
DC Characteristics
Reverse voltage
I
= 100 µA
R
Forward voltage
I
= 1 mA
F
AC Characteristics
Diode capacitance
V
= 0.2 V, f = 1 MHz
R
Differential resistance
V
= 0 V, f = 10 kHz
R
Symbol Values Unit
min. typ. max.
8 10 -
V
- 190 300 mV
- 0.65 0.85 pF
- 30 -
k
C
R
V
V
R
F
T
0
2
Jul-24-2002
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