Integrated Device Technology, Inc.
HIGH-SPEED
4K x 9 SYNCHRONOUS
DUAL-PORT RAM
IDT7099S
FEATURES:
• High-speed clock-to-data output times
— Military: 20/25/30ns (max.)
— Commercial: 15/20/25ns (max.)
• Low-power operation
— IDT7099S
Active: 900 mW (typ.)
Standby: 50 mW (typ.)
• Architecture based on Dual-Port RAM cells
— Allows full simultaneous access from both ports
— Independent bit/byte Read and Write inputs for control
functions
• Synchronous operation
— 4ns setup to clock, 1ns hold on all control, data, and
address inputs
— Data input, address, and control registers
— Fast 15ns clock to data out
— 20ns cycle times, 50MHz operation
• Clock enable feature
• Guaranteed data output hold times
• Available in 68-pin PGA, 68-pin PLCC, and 80-pin TQFP
• Military product compliant to MIL-STD-883, Class B
• Industrial temperature range (–40°C to +85°C) is available, tested to military electrical specifications
DESCRIPTION:
The IDT7099 is a high-speed 4K x 9 bit synchronous DualPort RAM. The memory array is based on Dual-Port memory
cells to allow simultaneous access from both ports. Registers
on control, data, and address inputs provide low set-up and
hold times. The timing latitude provided by this approach
allow systems to be designed with very short realized cycle
times. With an input data register, this device has been
optimized for applications having unidirectional data flow or
bi-directional data flow in bursts. Changing data direction from
reading to writing normally requires one dead cycle.
These Dual-Ports typically operate on only 900mW of
power at maximum high-speed clock-to-data output times as
fast as 15ns. An automatic power down feature, controlled
by CE, permits the on-chip circuitry of each port to enter a very
low standby power mode.
The IDT7099 is packaged in a 68-pin PGA, 68-pin PLCC,
and a 80-pin TQFP. Military grade product is manufactured in
compliance with the latest revision of MIL-STD-883, Class B,
making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
REGISTER
I/O
8L
I/O
0-7L
BIT
OE
L
BYTE
OE
L
CLK
L
CLKEN
BIT R/
W
L
BYTE R/
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
CE
W
L
L
REG
Write
Control
Logic
WRITE
LOGIC
SENSE
AMPS
MEMOR
MEMORY
Y
ARRAY
ARRAY
DECODER
REG
en
A0L-A
11L
DECODER
REG
en
A0R-A
11R
WRITE
LOGIC
SENSE
AMPS
REGISTER
Write
Control
Logic
REG
I/O
8R
I/O
0-7R
BIT
OE
BYTE
OE
CLK
R
CLKEN
BIT R/
W
BYTE R/
CE
R
3007 drw 01
R
R
R
R
W
R
MILITARY AND COMMERCIAL TEMPERATURE RANGES OCTOBER 1996
©1996 Integrated Device Technology, Inc. DSC-3007/3
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
6.23 1
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
(1,2)
BYTE
BIT
BYTE R/
BIT R/
INDEX
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
OE
OE
L
V
CC
W
L
W
L
N/C
CE
L
GND
I/O
8L
I/O
7L
I/O
6L
R
L
L
4L
2L
5L
A
98765432168 67 66 65 64 63 62 61
10
11
12
13
14
15
16
L
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
N/C
A
5L
I/O
1L
0L
3L
A
A
A
A
4L
3L
CC
V
I/O
I/O
R
CLKEN
CLK
CLK
IDT7099
J68-1
68-Pin PLCC
Top View
1L
2L
0L
GND
I/O
I/O
I/O
0R
CLKEN
A
(3)
0R
GND
I/O
1R
A
1R
I/O
2R
A
2R
I/O
3R
A
3R
I/O
4R
A
CC
V
5R
A
4R
I/O
6R
A
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
5R
I/O
A
7R
A
8R
A
9R
A
10R
A
11R
BYTE
BIT
OE
GND
GND
BYTE R/
BIT R/
N/C
CE
R
GND
I/O
8R
I/O
7R
I/O
6R
3007 drw 03
OE
W
R
R
W
R
R
51
A
A
A
BIT
OE
BYTE
R/
GND
I/O
I/O
0R
1R
A
A
NC
7L
9L
11L
L
L
W
7L
6L
50 48 46 44 42 40 38 36
A
5L
A
4L
52 49 47 45 43 41 39 37 3553 34
A
3L
A
6L
5455
A
8L
5657
A
10L
5859
BYTE
L
OE
6061
V
CC
6263
BIT
L
R/
W
6465
CE
L
6667
I/O
8L
168
3
V
CC
NC
2
4
I/O5LI/O
INDEX
ABCDEFGHJKL
NOTES:
1. All VCC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. This text does not indicate orientation of the actual
part-marking.
A
A
2L
A
0L
CLK
L
CLKEN
A
1L
CLKEN
L
CLKRA
IDT7099
G68-1
68-Pin PGA
Top View
5
7
9
111213141516181719
I/O
3L
I/O
1L
GND
6
8
10
4L
I/O
2L
I/O
0L
GND
A
1R
R
0R
A
2R
(3)
I/O
0R
I/O
2R
I/O
1R
I/O
3R
I/O
A
3R
A
4R
V
CC
4R
5R
A
6R
32 33
A
9R
30 31
A
11R
28 29
BIT
R
OE
26 27
GND GND
24 25
BIT
R
R/
W
22 23
CE
R
20 21
I/O
8R
I/O
6R
I/O
5R
A
7R
A
8R
A
10R
BYTE
R
OE
BYTE
R
R/
W
NC
GND
I/O
7R
3007 drw 02
6.23 2
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS (CONT'D)
(1,2)
Reference
1L
3L
BYTE
BIT
BYTE R/
BIT R/
N/C
A
A
A
A
A
10L
A
11L
N/C
OE
OE
V
W
W
N/C
CE
GND
I/O
I/O
I/O
N/C
5L
4L
A
A
N/C
N/C
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61
1
6L
2
7L
3
8L
4
9L
5
6
7
8
L
9
L
10
CC
11
L
12
L
13
14
L
15
16
8L
17
7L
18
6L
19
20
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
4L
5L
CC
V
N/C
N/C
I/O
I/O
0L
2L
A
A
A
A
IDT7099
PN80-1
80-Pin TQFP
Top View
3L
2L
1L
I/O
I/O
I/O
NOTES:
1. All VCC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. This text does not indicate the orientaion of the actual part-marking.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Military Unit
(2)
V
TERM
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V
with Respect to
GND
(3)
V
TERM
T
Terminal Voltage –0.5 to VCC –0.5 to VCC V
A Operating 0 to +70 –55 to +125 °C
Temperature
BIAS Temperature –55 to +125 –65 to +135 °C
T
Under Bias
T
STG Storage –55 to +125 –65 to +150 °C
Temperature
I
OUT DC Output Current 50 50 mA
NOTES: 3007 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
TERM must not exceed Vcc + 0.5V for more than 25% of the cycle time
2. V
or 10ns maximum, and is limited to
+ 0.5V.
< 20mA for the period of VTERM > Vcc
R
L
R
L
6R
4R
2R
CLKEN
CLK
0L
I/O
GND
CLK
0R
I/O
GND
0R
CLKEN
A
(3)
1R
2R
I/O
I/O
1R
A
3R
I/O
5R
3R
A
A
A
A
A
4R
CC
V
I/O
5R
I/O
N/C
N/C
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
3007 drw 04
N/C
N/C
A
7R
A
8R
A
9R
A
10R
A
11R
N/C
BYTE
BIT
OE
GND
GND
BYTE R/
BIT R/
N/C
CE
R
GND
I/O
8R
I/O
7R
I/O
6R
N/C
OE
W
R
R
W
R
R
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade Temperature GND VCC
Military –55°C to +125°C 0V 5.0V ± 10%
Commercial 0°C to +70°C 0V 5.0V ± 10%
RECOMMENDED DC OPERATING
CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
VCC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
(2)
(2)
Max. Unit
V
IH Input High Voltage 2.2 — 6.0
IL Input Low Voltage –0.5
V
(1)
— 0.8 V
NOTES: 3007 tbl 03
1. VIL > -1.5V for pulse width less than 10ns.
TERM must not exceed Vcc + 0.5V.
2. V
CAPACITANCE
(1)
(TA = +25°C, F = 1.0MHZ) TQFP ONLY
Symbol Parameter Condition
CIN Input Capacitance VIN = 3dV 9 pF
COUT Output Capacitance VOUT = 3dV 10 pF
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output
switch from 0V to 3V or from 3V to 0V.
3007 tbl 02
V
3007 tbl 04
6.23 3