Integrated Device Technology Inc IDT6168LA15D, IDT6168LA15DB, IDT6168LA15P, IDT6168LA15PB, IDT6168LA15SO Datasheet

Integrated Device Technology, Inc.

CMOS STATIC RAM
16K (4K x 4-BIT)

IDT6168SA

IDT6168LA

FEATURES:

• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45ns (max.)
— Commercial: 15/20/25/35ns (max.)

• Low power consumption

• Battery backup operation—2V data retention voltage
(IDT6168LA only)

• Available in high-density 20-pin ceramic or plastic DIP, 20­pin SOIC.

• Produced with advanced CMOS high-performance
technology

• CMOS process virtually eliminates alpha particle soft-error
rates

• Bidirectional data input and output

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT6168 is a 16,384-bit high-speed static RAM orga­nized as 4K x 4. It is fabricated using lDT’s high-performance,
high-reliability CMOS technology. This state-of-the-art tech­nology, combined with innovative circuit design techniques,

FUNCTIONAL BLOCK DIAGRAM

A0

provides a cost-effective approach for high-speed memory
applications.

Access times as fast 15ns are available. The circuit also

offers a reduced power standby mode. When CS goes HIGH,

the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The low­power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery. All inputs and outputs of the
IDT6168 are TTL-compatible and operate from a single 5V
supply.

The IDT6168 is packaged in either a space saving 20-pin,
300-mil ceramic or plastic DIP, 20-pin SOIC providing high
board-level packing densities.

Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.

VCC

GND

ADDRESS
DECODER

A11

I/O0

I/O1

I/O2

I/O3

CS

WE

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

INPUT

DATA

CONTROL

16,384-BIT

MEMORY ARRAY

I/O CONTROL

3090 drw 01

MILITARY AND COMMERCIAL TEMPERATURE RANGE MAY 1996

1996 Integrated Device Technology, Inc. 3090/2
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

5.3

1

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

A
A
A
A
A
A
A
A

CS

GND

1

0

2

1

3

2

4

3

5

4

6

5

7

6

8

7

9
10

P20-1,

D20-1,

&

SO20-2

DIP/SOJ

TOP VIEW

20
19

18
17
16
15
14
13
12
11

V

CC

A

11

A

10

A

9

A

8

I/O
I/O
I/O
I/O

WE

3
2
1
0

3090 drw 02

PIN DESCRIPTIONS

Name Description

A

0–A11 Address Inputs

CS

WE

0-3 Data Input/Output

I/O

CC Power

V

Chip Select
Write Enable

GND Ground

3090 tbl 01

CAPACITANCE (TA = +25°C, F = 1.0MHZ)

Symbol Parameter

C

IN Input Capacitance VIN = 0V 7 pF

I/O I/O Capacitance VOUT = 0V 7 pF

C

NOTE: 3090 tbl 02

1. This parameter is determined by device characterization, but is not
production tested.

(1)

Conditions Max. Unit

CS

CS

(1)

WE

WE

Output Power

TRUTH TABLE

Mode

Standby H X High-Z Standby

Read L H D
Write L L D

NOTE: 3090 tbl 03

1. H = VIH, L = VIL, X = Don't Care

ABSOLUTE MAXIMUM RATINGS

OUT Active

IN Active

(1)

Symbol Rating Com’l. Mil. Unit

V

TERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

with Respect

to GND

T

A Operating 0 to +70 –55 to +125 °C

Temperature

T

BIAS Temperature –55 to +125 –65 to +135 °C

Under Bias

T

STG Storage –55 to +125 –65 to +150 °C

Temperature

P

T Power Dissipation 1.0 1.0 W

OUT DC Output 50 50 mA

I

Current

NOTE: 3090 tbl 04

1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

CC Supply Voltage 4.5 5.0 5.5 V

V

GND Supply Voltage 0 0 0 V

V

IH Input High Voltage 2.2 — 6.0 V

IL Input Low Voltage –0.5

V

NOTE: 3090 tbl 05

1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.

(1)

— 0.8 V

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5V ± 10%

Commercial 0°C to +70°C 0V 5V ± 10%

3090 tbl 06

5.3 2

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

6168SA15 6168SA20

6168LA20

Symbol Parameter Power Com’l. Mil. Com’l. Mil. Unit

I

CC1 Operating Power Supply Current SA 110 120 90 100 mA

CS

≤ V

IL, Outputs Open,

V

CC = Max., f = 0

I

CC2 Dynamic Operating Current SA 145 165 120 120 mA

CS

≤ V

IL, Outputs Open,

V

CC = Max., f = fMAX

SB Standby Power Supply Current SA 55 60 45 45 mA

I

(2)

(2)

LA — — 70 80

LA — — 100 110

(TTL Level)

CS

≥ V

IH, VCC = Max., LA — — 30 35

Outputs Open, f = f

MAX

(2)

ISB1 Full Standby Power Supply Current SA 20 20 20 20 mA

(CMOS Level)

CS

≥ V

HC, VCC = Max., LA — — 0.5 5

V

IN ≥ VHC or VIN ≤ VLC, f = 0

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

(2)

3090 tbl 07

(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

6168SA25 6168SA35 6168SA45
6168LA25 6168LA35 6168LA45

Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit

CC1 Operating Power Supply Current SA 90 100 90 — — 100 mA

I

CS

≤ V

IL, Outputs Open,

V

CC = Max., f = 0

CC2 Dynamic Operating Current SA 110 120 100 — — 110 mA

I

CS

≤ V

IL, Outputs Open,

V

CC = Max., f = fMAX

I

SB Standby Power Supply Current SA 35 45 30 — — 35 mA

(TTL Level)

CS

≥ V

IH, VCC = Max., LA 25 30 20 — — 25

Outputs Open, f = f

ISB1 Full Standby Power Supply Current SA 3 10 3 — — 10 mA

(CMOS Level)

CS

≥ V

HC, VCC = Max., LA 0.5 0.3 0.5 — — 0.3

V

NOTES: 3090 tbl 08

1. All values are maximum guaranteed values.

MAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.

2. f

IN ≥ VHC or VIN ≤ VLC, f = 0

(2)

(2)

(2)

MAX

(2)

LA 70 80 70 — — 80

LA 90 100 80 — — 80

DC ELECTRICAL CHARACTERISTICS VCC = 5.0V ± 10%

IDT6168SA IDT6168LA

Symbol Parameter Test Condition Min. Max. Min. Max. Unit

|I

LI| Input Leakage Current VCC = Max., MIL — 10 — 5 µA

V

IN = GND to VCC COM’L — 2 — 2

LO| Output Leakage Current VCC = Max.,

|I

V

OUT = GND to VCC COM’L — 2 — 2

OL Output LOW Voltage IOL = 10mA, VCC = Min. — 0.5 — 0.5 V

V

OL = 8mA, VCC = Min. — 0.4 — 0.4

I

V

OH Output HIGH Voltage IOH = –4mA, VCC = Min. 2.4 — 2.4 — V

CS

= VIH, MIL — 10 — 5 µA

5.3 3

3090 tbl 09

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

DATA RETENTION CHARACTERISTICS (LA Version Only)

LC = 0.2V, VHC = VCC – 0.2V

V

IDT6168LA

Symbol Parameter Test Condition Min. Typ.

DR VCC for Data Retention 2.0 — — V

V

I

CCDR Data Retention Current MIL. — 0.5

CS

≥ V

HC — 1.0

VIN ≥ VHC COM’L. — 0.5
or ≤ V

LC — 1.0

(5)

tCDR

Chip Deselect to Data 0 — — n s

(1)

(2)
(3)
(2)
(3)

Max. Unit

(2)

100
150

20
30

(3)
(2)
(3)

µA
µA

Retention Time

(5)

t

R

NOTES: 3090 tbl 10

1. TA = +25°C.

CC = 2V

2. at V

CC = 3V

3. at V

RC = Read Cycle Time.

4. t

5. This parameter is guaranteed by device characterization, but is not production tested.

Operation Recovery Time tRC

(2)

——ns

LOW VCC DATA RETENTION WAVEFORM

DATA

RETENTION

VCC

4.5V 4.5V

MODE

DR ≥ 2V

V

tRtCDR

V

CS

IH VIH

AC TEST CONDITIONS

Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 5ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
AC Test Load See Figures 1 and 2

5V

480Ω

OUT

DATA

255Ω

30pF*

3090 drw 04

3090 tbl 11

VDR

DATA

OUT

255Ω

3090 drw 03

5V

480Ω

5pF*

3090 drw 05

Figure 1. AC Test Load

*Includes scope and jig capacitances

5.3 4

Figure 2. AC Test Load

(for t

CHZ, tCLZ, tWHZ and tOW)

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS (CONTINUED) (VCC = 5.0V ± 10%, All Temperature Ranges)

6168SA15 6168SA20/25 6168SA35 6168SA45

6168LA20/25 6168LA35 6168LA45

Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit

Read Cycle

RC Read Cycle Time 15 — 20/25 — 35 — 45 — ns

t
t

AA Address Access Time — 15 — 20/25 — 35 — 45 ns
ACS Chip Select Access Time — 15 — 20/25 — 35 — 45 ns

t

(2)

CLZ

t

(2)

t

CHZ
OH Output Hold from Address Change 3 — 3 — 3 — 3 — ns

t

(2)

t

PU

(2)

PD

t

NOTES: 3090 tbl 12

1. –55°C to +125°C temperature range only.

2. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested.

Chip Select to Output in Low-Z 3 — 5 — 5 — 5 — ns
Chip Deselect to Output in High-Z — 8 — 10 — 15 — 25 ns

Chip Select to Power-Up Time 0 — 0 — 0 — 0 — ns
Chip Deselect to Power-Down Time — 35 — 20/25 — 35 — 40 ns

(1)
(1)

TIMING WAVEFORM OF READ CYCLE NO. 1

ADDRESS

tAA

tOH

DATA

OUT

PREVIOUS DATA VALID DATA VALID

TIMING WAVEFORM OF READ CYCLE NO. 2

CS

t

ACS

(4)

t

CLZ

DATA

OUT

I

CC

V

SUPPLY

CC

CURRENT

I

SB

NOTES:

1.WE is HIGH for Read cycle.

2.CS is LOW for Read cycle.

3. Device is continuously selected, CS is LOW.

3. Address valid prior to or coincident with CS transition LOW.

4. Transition is measured ±200mV from steady state.

HIGH IMPEDANCE

t

PU

(1, 2)

(1, 3)

tRC

3090 drw 06

t

RC

(3)

t

CHZ

DATA

OUT

VALID

t

HIGH IMPEDANCE

PD

3090 drw 07

5.3 5

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS (CONTINUED) (VCC = 5.0V ± 10%, All Temperature Ranges)

6168SA15 6168SA20/25 6168SA35 6168SA45

6168LA20/25 6168LA35 6168LA45

Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit

Write Cycle

WC Write Cycle Time 15 — 20 — 30 — 40 — ns

t

CW Chip Select to End-of-Write 15 — 20 — 30 — 40 — ns

t
t

AW Address Valid to End-of-Write 15 — 20 — 30 — 40 — ns
AS Address Set-up Time 0 — 0 — 0 — 0 — ns

t
t

WP Write Pulse Width 15 — 20 — 30 — 40 — ns
WR Write Recovery Time 0 — 0 — 0 — 0 — ns

t
t

DW DataValid to End-of-Write 9 — 10 — 15 — 20 — ns
DH Data Hold Time 0 — 0 — 0 — 3 — ns

t

(3)

WHZ

t
t

OW

NOTES: 3090 tbl 13

1. 0° to +70°C temperature range only.

2. –55°C to +125°C temperature range only.

3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.

Write Enable to Output in High-Z — 6 — 7 — 13 — 20 ns

(3)

Output Active from End-of-Write 0 — 0 — 0 — 0 — ns

(2)

2)

TIMING WAVEFORM OF WRITE CYCLE NO. 1 (

tWC

ADDRESS

tAW

CS

tWP

(4)

DATA

DATA

WE

OUT

t AS

(6)

tWHZ

PREVIOUS DATA VALID

IN

WEWE CONTROLLED TIMING)

(3)

tWR

(6)

tOW

t

DW

DATA VALID

t

DH

(1, 2, 5)

DATA

VALID

(6)

tCHZ

(4)

3090 drw 08

5.3 6

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

TIMING WAVEFORM OF WRITE CYCLE NO. 2 (

CSCS CONTROLLED TIMING)

t

WC

(1, 2, 5)

ADDRESS

t

AW

CS

(3)

t t

AS

t

CW

t

WR

WE

t

DW

DATA

IN

NOTES:

1.WE or CS must be HIGH during all address transitions.

2. A write occurs during the overlap of a LOW CS and a LOW WE.

3. t

WR is measured from the earlier of

4. During this period, the I/O pins are in the output state and input signals should not be applied.

5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state.

6. Transition is measured ±200mV from steady state.

CS

or WE going HIGH to the end of the write cycle.

DATA VALID

t

DH

3090 drw 09

ORDERING INFORMATION

6168IDT

Device

Type

XX

Power

XXX

SpeedXXPackage

X

Process/

Temperature

Range

BlankBCommercial (0°C to +70°C)

°

Military (–55

C to +125°C)

Compliant to MIL-STD-883, Class B

P
D
SO

300mil Plastic DIP (P20-1)
300mil Ceramic DIP (D20-1)
300mil Small Outline IC, Gull Wing (SO20-2)

15
20
25

Speed in nanoseconds
35
45

SA
LA

Military Only

Standard Power
Low Power

3090 drw 10

5.3 7