• Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP,
15.7 mil pitch TVSOP and 25 mil pitch Cerpack
• Extended commercial range of -40°C to +85°C
•V
CC = 5V ±10%
• Low input and output leakage ≤ 1µA (max.)
FUNCTIONAL BLOCK DIAGRAM
OE1
B11
A1
B14
DESCRIPTION:
The FCT162344AT/CT/ET is a 1:4 address line driver built
using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
memory arrays. Eight banks, each with a fanout of 4, and 3state control provide efficient address distribution. One or
more banks may be used for clock distribution.
The FCT162344AT/CT/ET has balanced output drive with
current limiting resistors. This offers low ground bounce,
minimal undershoot and controlled output fall times reducing
the need for external series terminating resistors.
A large number of power and ground pins and TTL output
swings also ensure reduced noise levels. All inputs are
designed with hysteresis for improved noise margins.
OE3
B51
A5
B54
A2
OE2
A3
A4
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
B21
A6
B24
OE4
B31
A7
B34
B41
A8
B44
B61
B64
B71
B74
B81
B84
3069 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGESAUGUST 1996
TSTGStorage Temperature–65 to +150°C
IOUTDC Output Current–60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. All device terminals except FCT162XXXT Output and I/O terminals.
3. Output and I/O terminals for FCT162XXXT.
Terminal Voltage with Respect to
GND
(3)
Terminal Voltage with Respect to
GND
(1)
–0.5 to +7.0V
–0.5 to
CC +0.5
V
3069 lnk 03
V
FUNCTION TABLE
(1)
InputsOutputs
OE
x AxBxx
LLL
LHH
HXZ
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
CAPACITANCE
SymbolParameter
C
IN
Input
(TA = +25°C, f = 1.0MHz)
(1)
ConditionsTyp.Max. Unit
VIN = 0V3.56.0
Capacitance
C
OUT
Output
V
OUT
= 0V3.58.0
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
3069 tbl 02
pF
pF
3069 lnk 04
5.63
IDT54/74FCT162344AT/CT/ET
FAST CMOS ADDRESS LINE DRIVERMILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = –40°C to +85°C, VCC = 5.0V ± 10%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
SymbolParameterTest Conditions
(1)
Min. Typ.
VIHInput HIGH LevelGuaranteed Logic HIGH Level2.0——V
VILInput LOW LevelGuaranteed Logic LOW Level——0.8V
II HInput HIGH Current (Input pins)