Icom IC-703 Plus Two RD07MVS1 finals

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

DESCRIPTION

RD07MVS1 is a MOS FET type transistor

specifically designed for VHF/UHF RF power

amplifiers applications.

OUTLINE DRAWING

FEATURES

High power gain:

Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz

High Efficiency: 60%typ. (175MHz)

High Efficiency: 55%typ. (520MHz)

Integrated gate protection diode.

APPLICATION

For output stage of high power amplifiers in

VHF/UHF band mobile radio sets.

RoHS COMPLIANT

RD07MVS1-501, T512, T514 is EU RoHS compliant.

RoHS compliance is indicating by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

VDSS Drain to source voltage Vgs=0V 30 V

VGSS Gate to source voltage Vds=0V -5 / +10 V

Pch * Channel dissipation Tc=25°C 50 W

Pin Input Power Zg=Zl=50 1.5 W

ID Drain Current - 3 A

Tch Junction Temperature - 150

Tstg Storage temperature - -40 to +125

Rth j-c Thermal resistance Junction to case 2.5

Note: Above parameters are guaranteed independently.

* Theoretical value in case of mounted on infinite heat sink.

Publication Date : May．2017

PARAMETER CONDITIONS RATINGS UNIT

°C

°C

°C/W

1

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

ELECTRICAL CHARACTERISTICS

(Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL

I

Zero gate voltage drain current VDS=17V, VGS=0V - - 200 uA

DSS

I

Gate to source leak current VGS=10V, VDS=0V - - 1 uA

GSS

VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.4 2.0 2.4 V

Pout1 Output power

D1

Pout2 Output power

D2

VSWRT1 Load VSWR tolerance

VSWRT2 Load VSWR tolerance

Note: Above parameters, ratings, limits and conditions are subject to change.

Drain efficiency 55 60 - %

Drain efficiency 50 55 - %

PARAMETER CONDITIONS

MIN TYP MAX.

f=175MHz , VDD=7.2V

Pin=0.3W,Idq=700mA

f=520MHz , VDD=7.2V

Pin=0.7W,Idq=750mA

VDD=9.2V,Po=7W(Pin Control)

f=175MHz,Idq=700mA,Zg=50

Load VSWR=20:1(All Phase)

VDD=9.2V,Po=7W(Pin Control)

f=520MHz,Idq=750mA,Zg=50

Load VSWR=20:1(All Phase)

LIMITS UNIT

7 8 - W

7 8 - W

No destroy -

No destroy -

Publication Date : May．2017

2

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

TYPICAL CHARACTERISTICS

(These are only typic al curves and devices are not necessarily guaranteed at these curves.)

60

50

40

30

20

CHANNEL DISSIPATION VS.

AMBIENT TEMPERATURE

*1:The material of the PCB

Glass epoxy (t=0.6 mm)

On PCB(*1) with Heat-s ink

On PCB(*1)

with throgh hole

and Heat-sink

10

0

CHANNEL DISSIPA TION Pch(W)...

0 40 80 120 160 20 0

AMBIENT TEMPERATUR E Ta(deg:C.)

Publication Date : May．2017

3

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

TYPICAL CHARACTERISTICS

(These are only typic al curves and devices are not necessarily guaranteed at these curves.)

Publication Date : May．2017

4

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

TEST CIRCUIT(f=175MHz)

Vgg Vdd

C1

5mm

RF-in

L:Enameled wire 7 Turns,D:0.43mm,2.46mmm O.D

C1,C2:1000pF,0.0022μF in parallel

62pF

19.5mm

24.5mm 6.5mm

140pF

TEST CIRCUIT(f=520MHz)

4.7KΩ

100pF

19mm

11.5mm 3mm

680Ω

180pF

C2 10μF,50V

15mm

RD07MVS1
175MHz

3.5mm 11.5mmL6.5mm

Note:Board m aterial PTFE substrate
Micro strip line width=2.2mm/50Ω, er:2.7,t=0.8mm
W:line width=1.0mm

22pF

22pF

16pF

28.5mm

56pF

10mm 5mm

62pF

RF-OUT

Note: Board material-PTFE substrate, Micro strip line width=2.2mm/50Ω, εr=2.7, t=0.8mm

W : Line width=1.0mm

L : 6turns, D=0.43mm, φ=2.46mm(the outside diameter) , enameled wire

C1, C2: Parallel of 1000pF & 0.022μF

Publication Date : May．2017

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< Silicon RF Power MOS FET (Discrete) >

175MHz Zin* Zout*

Zin*=1.55+j5.53

520MHz Zin* Zout*

Zin*=0.76+j0.06

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS

Zo=10

175MHz Zin*

175MHz Zout*

Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W

Zout*=3.24-j0.26

Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance

output impedance

Zo=10

520MHz Zin*

Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W

Zout*=1.61-j0.52

Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance

520MHz Zout*

Publication Date : May．2017

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< Silicon RF Power MOS FET (Discrete) >

RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)

S11

S21

S12

S22

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

Freq.

(MHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

100 0.856 -171.6 8.712 79.1 0.012 -9.7 0.821 -172.9
150 0.864 -173.4 5.643 70.9 0.012 -16.8 0.835 -173.4
175 0.870 -173.8 4.746 67.3 0.012 -20.1 0.844 -173.5
200 0.876 -174.2 4.065 63.8 0.011 -23.0 0.853 -173.6
250 0.888 -175.0 3.096 57.4 0.011 -28.6 0.870 -173.7
300 0.900 -175.5 2.445 51.8 0.010 -33.2 0.885 -174.0
350 0.912 -176.2 1.981 46.6 0.009 -37.4 0.899 -174.5
400 0.921 -176.9 1.635 41.9 0.008 -40.8 0.910 -175.0
450 0.930 -177.5 1.368 37.8 0.007 -43.6 0.918 -175.5
500 0.937 -178.2 1.158 34.1 0.007 -46.0 0.924 -176.0
520 0.939 -178.4 1.087 32.8 0.006 -46.8 0.925 -176.1
550 0.943 -178.9 0.991 31.0 0.006 -47.9 0.928 -176.3
600 0.948 -179.5 0.859 28.3 0.005 -49.2 0.934 -176.6
650 0.953 179.8 0.752 25.7 0.005 -49.8 0.941 -176.9
700 0.956 179.3 0.666 23.2 0.004 -50.6 0.947 -177.4
750 0.959 178.6 0.592 21.0 0.004 -50.6 0.954 -177.9
800 0.962 178.0 0.530 18.9 0.003 -50.3 0.957 -178.4
850 0.964 177.4 0.477 16.8 0.003 -48.6 0.961 -179.0
900 0.966 176.8 0.432 15.0 0.002 -47.2 0.963 -179.6

950 0.968 176.1 0.393 13.3 0.002 -43.0 0.966 179.9
1000 0.969 175.6 0.359 11.7 0.002 -38.1 0.967 179.4
1050 0.970 174.9 0.328 10.0 0.001 -28.9 0.969 178.9
1100 0.970 174.3 0.302 8.4 0.001 -14.9 0.970 178.4

Publication Date : May．2017

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< Silicon RF Power MOS FET (Discrete) >

have

until cold after switch

his products without cause damage for human and

details

copies of the formal

(RF power transistors) are designed

other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

In the application, which is base station applications and

off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

predicted operating life time of

an authorized Mitsubishi

therefore

device is

It is

sink in conjunction with other cooling methods as needed (fan,

lower than 120deg/C(in case of

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or

the

Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in

, please refer the last page

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in

under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-

period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage

appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the

deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.

recommended to utilize a sufficient sized heat­etc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to

supplementary items in the specification sheet.

8.

any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials

of this data sheet.

Publication Date : May．2017

8

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 520MHz, 7W, 7.2V

10. Please avoid use in the place where water or organic solvents can adhere directly to the product and the

environments with the possibility of caustic gas, dust, salinity, etc. Reliability could be markedly decreased
and also there is a possibility failures could result causing a serious accident. Likewise, there is a possibility
of causing a serious accident if used in an explosive gas environment. Please allow for adequate safety
margin in your designs.

11. Please refer to the additional precautions in the formal specification sheet.

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.

Keep safety first in your circuit designs!

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s

rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and algorithms

represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor

product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

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Notes regarding these materials

© 2017 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : May．2017

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