HP MSA-0370 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0370
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
1dB
at
Description
The MSA-0370 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold metallization to
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
V
CC
> 7 V
, 25␣ GHz f
T
MAX
, silicon
70 mil Package
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
5965-9569E
6-306
MSA-0370 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
425 mW
> 147° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 125°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5
Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 2.8
Input VSWR f = 0.1 to 3.0 GHz 1.8:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 3.0 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
6-307
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