HP MSA-0335, MSA-0336-BLK, MSA-0336-TR1 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0335, -0336
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.7 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1dB
at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0335 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0336.
35 micro-X Package
Note:
1. Short leaded 36 package available
upon request.
[1]
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9568E
V
> 7 V
CC
6-302
MSA-0335, -0336 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 6.7 mW/° C for T
4. Storage above +150°C may tarnish the leads of this package making it
5. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
difficult to solder into a circuit.
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
[4]
C
425 mW
–65 to 200° C
> 136° C.
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 150°C/W
[2,5]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 2.7
Input VSWR f = 0.1 to 3.0 GHz 1.6:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 3.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 10.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 6.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
MSA-0335, -0336 Part Number Ordering Information
Part Number No. of Devices Container
MSA-0335 10 Strip
MSA-0336-BLK 100 Antistatic Bag
MSA-0336-TR1 1000 7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
6-303
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