HP MSA-0300-GP4 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0300
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0␣ dBm Typical P
1.0␣ GHz
1 dB
at
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Description
The MSA-0300 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
section, “Chip Use”.
Typical Biasing Configuration
R
bias
[1]
See APPLICATIONS
V
> 7 V
CC
MAX
Chip Outline
[1]
,
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
RFC (Optional)
C
block
IN OUT
MSA
C
block
= 5 V
V
d
5965-9565E
6-290
MSA-0300 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
(TMS)
[2,3]
= 25°C.
425 mW
> 181°C.
C
than do alternate methods. See MEASURE-
jc
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 22.2 mW/° C for T
4. The small spot size of this technique results in a higher, though more
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 45°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6
P
3 dB Bandwidth GHz 2.8
Input VSWR f = 0.1 to 3.0 GHz 1.8:1
Output VSWR f = 0.1 to 3.0 GHz 1.8:1
[1]
, T
A
= 25° C
[2]
: Id = 35 mA, Z
= 50 Ω Units Min. Typ. Max.
O
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
2.
RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number Devices Per Tray
MSA-0300-GP4 100
6-291
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