HP MSA-0286-BLK, MSA-0286-TR1 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0286
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface
Mount Semiconductors”.
[1]
Description
The MSA-0286 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
V
86 Plastic Package
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
,
MAX
> 7 V
CC
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9564E
6-286
MSA-0286 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 105°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 9.5 mW/° C for T
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 25 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.0 12.0
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.4:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
Third Order Intercept Point f = 1.0 GHz dBm 17.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
[2,4]
:
> 116° C.
C
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0286-TR1 1000 7" Reel
MSA-0286-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-287
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