Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0285
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.6 GHz
• 12.0 dB Typical Gain at
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Description
The MSA-0285 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
85 Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9563E
6-282
MSA-0285 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 10.5 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 119°C.
C
[1]
Thermal Resistance
θjc = 95°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 25 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.0 12.0
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6
3 dB Bandwidth GHz 2.6
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
Output VSWR f = 0.1 to 3.0 GHz 1.4:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
Third Order Intercept Point f = 1.0 GHz dBm 17.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
6-283