HP MSA-0204 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0204
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.8 GHz
• 11.0 dB Typical Gain at
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Description
The MSA-0204 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
04A Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9696E
6-270
MSA-0204 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 90°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 11.1 mW/° C for T
CASE
= 25°C.
121°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications
[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω Units Min. Typ. Max.
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
f = 0.5 GHz 10.0 12.0
f = 1.0 GHz 11.0
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.4 GHz dB ±1.0
P
3 dB Bandwidth GHz 1.8
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
Output VSWR f = 0.1 to 3.0 GHz 1.3:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
Third Order Intercept Point f = 1.0 GHz dBm 17.0
Group Delay f = 1.0 GHz psec 150
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
[2,4]
C
:
>
6-271
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