HP MSA-0200-GP4 Datasheet

Cascadable Silicon Bipolar MMIC␣ Amplifier
Technical Data
MSA-0200

Features

• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
1.0␣ GHz
• Unconditionally Stable (k>1)

Description

The MSA-0200 is a high perfor­mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general
purpose 50 gain block. Typical
applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f
MAX
, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli­zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
The recommended assembly procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
[1]
wire.
See APPLICATIONS
section, “Chip Use”.

Chip Outline

Note:
1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.
[1]

Typical Biasing Configuration

R
bias
RFC (Optional)
C
block
IN OUT
MSA
C
block
= 5 V
V
d
5965-9695E
V
> 7 V
CC
6-266

Absolute Maximum Ratings

Parameter Absolute Maximum
Device Current 60 mA
(TMS)
[2,3]
= 25°C.
325 mW
> 189°C.
MS
than do alternate methods. See MEASURE-
jc
Power Dissipation RF Input Power +13 dBm
Junction Temperature 200°C Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 28.6 mW/° C for T
4. The small spot size of this technique results in a higher, though more
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 35°C/W
[2,4]
:

MSA-0200 Electrical Specifications

Symbol Parameters and Test Conditions
G
P
G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6
P
3 dB Bandwidth GHz 2.8
Input VSWR f = 0.1 to 3.0 GHz 1.4:1
Output VSWR f = 0.1 to 3.0 GHz 1.4:1
[1]
, T
= 25° C
A
[2]
: Id = 25 mA, Z
= 50 Units Min. Typ. Max.
O
NF 50 Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
Third Order Intercept Point f = 1.0 GHz dBm 17.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page.
2.
RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.

Part Number Ordering Information

Part Number Devices Per Tray
MSA-0200-GP4 100
6-267
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