HP MSA-0170 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0170
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.3 GHz
• High Gain:
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0170 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic high
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
reliability package. This MMIC is
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9692E
6-254
MSA-0170 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8 mW/° C for T
4. The small spot size of this technique results in a higher, though more accurate determination of θ
= 25°C.
CASE
> 175° C.
C
methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance
θjc = 125°C/W
[2,4]
than do alternate
jc
:
MSA-0170 Electrical Specifications
Symbol Parameters and Test Conditions: Id = 17 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 18.0 19.0
Gain Flatness f = 0.1 to 0.7 GHz dB ±0.6
P
3 dB Bandwidth GHz 1.3
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
[1]
, T
= 25° C
A
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 3.0 GHz 1.3:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5
Third Order Intercept Point f = 0.5 GHz dBm 14.0
Group Delay f = 0.5 GHz psec 150
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
6-255
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