HP MSA-0104 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0104
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
wide bandwidth IF and RF
amplifiers in commercial and
industrial applications.
17.0 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Description
The MSA-0104 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
04A Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
V
= 5 V
d
5965-9690E
6-246
MSA-0104 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
MSA-0104 Electrical Specifications
[1]
, T
= 25° C
A
Symbol Parameters and Test Conditions: Id = 17 mA, Z
G
P
∆G
f
3 dB
VSWR
NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5
P
1 dB
IP
3
t
D
V
d
dV/dT Device Voltage Temperature Coefficient mV/°C –9.0
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
Power Gain (|S21|2) f = 0.1 GHz dB 17.0 18.5
f = 0.5 GHz 17.0
Gain Flatness f = 0.1 to 0.6 GHz dB ±1.0
P
3 dB Bandwidth GHz 0.8
Input VSWR f = 0.1 to 3.0 GHz 1.4:1
Output VSWR f = 0.1 to 3.0 GHz 1.3:1
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5
Third Order Intercept Point f = 0.5 GHz dBm 14.0
Group Delay f = 0.5 GHz psec 180
Device Voltage V 4.5 5.0 5.5
[1]
Thermal Resistance
θjc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 10 mW/° C for T
4. See MEASUREMENTS section
= 50 Ω Units Min. Typ. Max.
O
= 25°C.
CASE
“Thermal Resistance” for more
information.
[2,4]
:
> 130°C.
C
MSA-0104 Typical Scattering Parameters (Z
S
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 17 mA)
d
S
0.1 .06 141 18.4 8.31 170 –22.3 .077 5 .07 –9
0.2 .08 112 18.1 8.07 160 –22.3 .077 9 .07 –15
0.3 .10 94 17.8 7.75 151 –22.0 .079 15 .07 –22
0.4 .12 77 17.4 7.38 142 –21.6 .083 16 .07 –32
0.5 .13 70 16.9 7.01 134 –21.0 .089 19 .07 –37
0.6 .14 56 16.4 6.60 127 –20.7 .092 21 .08 –44
0.8 .16 41 15.4 5.87 114 –19.5 .106 27 .08 –53
1.0 .17 28 14.3 5.21 102 –18.9 .114 29 .08 –61
1.5 .17 5 12.1 4.02 78 –16.6 .148 30 .08 –73
2.0 .13 –12 10.2 3.25 59 –14.9 .179 25 .07 –90
2.5 .08 –20 8.9 2.77 46 –13.6 .209 25 .05 –112
3.0 .02 –37 7.7 2.42 31 –12.7 .232 18 .05 –134
3.5 .05 128 6.7 2.15 15 –11.9 .253 10 .06 –160
4.0 .12 113 5.7 1.92 –1 –11.3 .272 2 .06 –175
4.5 .19 97 4.8 1.73 –15 –10.8 .289 –7 .07 173
5.0 .27 80 3.9 1.56 –30 –10.6 .294 –15 .07 150
A model for this device is available in the DEVICE MODELS section.
6-247
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