HP IVA-05128 Datasheet

Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier
Technical Data
IVA-05128

Features

28 Package

50 MHz to 1.5 GHz
Bandwidth
Data Rates up to 2.0 Gbit/s
Wide Gain Control Range:
30␣ dB Typical
Differential Output
Capability
Bias V
5 V TTL Compatible V
Control Voltage, l
- Vee = 5 V
CC
< 3 mA
gc
gc
Hermetic Ceramic Surface
Mount Package
Typical Biasing Configuration and Functional␣ Block␣ Diagram
PIN 1

Description

The IVA-05128 is a variable gain amplifier housed in a miniature ceramic hermetic surface mount package. It is designed for narrow or wide bandwidth commercial, industrial and military applications that require high gain and wide gain control range. The amplifier can be used in a single­ended or differential output configuration. For low frequency applications (<50 MHz) a bypass capacitor and series resistor are connected to pin 4, the AC Input Ground lead.
Typical applications include variable gain amplification for fiberoptic systems at data rates in excess of the 1.24 Gb/s SONET standard, mobile radio and satellite receivers, millimeter wave receiver IF amplifiers and communications receivers.
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The IVA series of variable gain amplifiers is fabricated using HP’s 10 GHz fT, 25 GHz f silicon bipolar process. This process uses nitride self­alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter-metal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
ISOSATTM-I
MAX
5965-9974E

Absolute Maximum Ratings

Parameter Maximum
Device Voltage 8 V
Power Dissipation
Input Power +14 dBm
Vgc - V
ee
Junction Temperature 200°C Storage Temperature -65°C to 200°C
[2,3]
Absolute
600 mW
7 V
[1]
Thermal Resistance:
[2,4]
θjc = 50°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
= 25°C.
CASE
3. Derate at 20 mW/°C for TC >170°C.
4. See MEASUREMENTS section "’Thermal Resistance” in Communications Components Catalog, for more information.
[2]
[3]
[1]
, T
= 25° C
A
[2]
:
= 50 Units Min. Typ. Max.
O
f = 0.5 GHz dB 20 26
G Hz 1.0 1.5
[4]
[2]
) f = 0.5 GHz, Vgc = 0 to 5 V dB 45
f = 0.5 GHz, Vgc = 0 to 5 V dB 25 30

Electrical Specifications

Parameters and Test Conditions
Symbol VCC = 5 V, Vee = 0 V, Vgc = 0 V, Z
G
G
f
3dB
GCR Gain Control Range
ISO Reverse Isolation (|S12|
VSWR
Power Gain |S21|
P
Gain Flatness f = 0.05 to 1.0 GHz dB ±0.3
P
3 dB Bandwidth
Input VSWR f = 0.05 to 1.5 GHz, Vgc = 0 t o 5 V 1.7:1
Output VSWR f = 0.05 to 1.5 GHz, Vgc = 0 t o 5 V 1.5:1
NF 50 Noise Figure f = 0.5 GHz dB 9
P
1dB
Output Power f = 0.5 GHz dBm -2 at 1 dB Compression
IP
Output Third Order f = 0.5 GHz dBm 8
3
Intercept Point
t
I
CC
Notes:
1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following page.
2. As measured using Input Pin 1 and Output Pin 6; with Output Pin 7 terminated into 50 ohms.
3. Referenced from 50 MHz Gain.
4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2 V may result in gain increase rather than gain decrease.
Group Delay f = 0.5 GHz psec 400
D
Supply Current mA 25 35 45
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