HP ATF-26836-TR1 Datasheet
2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
Features
• High Output Power:
18.0␣ dBm Typical P
• High Gain:
9.0 dB Typical GSS at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
at 12␣ GHz
1 dB
[1]
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
G
SS
NF
G
A
P
1 dB
g
m
I
DSS
V
P
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA f = 12.0 GHz dB 7.0 9.0
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA f = 12.0 GHz dB 2.2
O
Gain @ NFO: VDS = 3 V, IDS = 10 mA f = 12.0 GHz dB 6.0
Power Output @ 1 dB Gain Compression: f = 12.0 GHz dB m 15.0 18.0
VDS = 5 V, IDS = 30 mA
Transconductance: VDS = 3 V, VGS = 0 V mmho 15 35
Saturated Drain Current: VDS = 3 V, VGS = 0 V mA 30 50 90
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.5 -1.5 -0.5
Description
The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
= 25° C
A
36 micro-X Package
5-67
5965-8704E
ATF-26836 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 350°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 275
Channel Temperature ° C 175
Storage Temperature
[4]
°C -65 to +175
= 150°C
CH
[5]
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-26836-TR1 1000 7"
ATF-26836-STR 10 strip
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 2.9 mW/°C for
>79°C.
T
CASE
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
ATF-26836 Typical Performance, T
25
20
MSG
15
10
GAIN (dB)
2
|S21|
5
0
2.0 4.0 6.0 8.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 30 mA.
10.0 12.0 16.0
25
20
15
10
GAIN (dB)
5
0
2.0 4.0 6.0 8.0
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 10 mA.
= 25° C
A
MSG
FREQUENCY (GHz)
|S21|
MAG
2
10.0 12.0 16.0
5-68
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