HP ATF-25735 Datasheet
0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
Features
• High Output Power:
19.0␣ Bm Typical P
• High Gain:
12.5␣ dB Typical G
• Low Noise Figure:
1.2 dB Typical at 4 GHz
• Cost Effective Ceramic
Microstrip Package
at 4␣ GHz
1 dB
at 4 GHz
1 dB
Description
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
G
P
G
g
I
DSS
V
A
1 dB
1 dB
m
P
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 2. 0 GHz dB 1.0
O
Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 15.0
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 19.0
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS = 5 V, IDS =50 mA f = 4.0 GHz dB 12.5
Transconductance: VDS =3 V, VGS = 0 V mmho 50 80
Saturated Drain Current: VDS =3 V, VGS = 0 V m A 50 100 150
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -2.0 -0.8
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
= 25° C
A
35 micro-X Package
f = 4.0 GHz 1.2 1.5
f = 6.0 GHz 1.4
f = 4.0 GHz 11.5 13.0
f =.6.0 GHz 10.5
5-63
5965-8710E
ATF-25735 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 325°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
ATF-25735 Typical Performance, T
25
20
15
10
GAIN (dB)
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 450
Channel Temperature ° C 175
Storage Temperature
MSG
|S21|
2
MAG
[4]
25
20
15
10
GAIN (dB)
°C -65 to +175
[5[
= 25° C
A
MSG
2
|S21|
= 150°C
CH
DSS
MAG
[1]
MSG
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 3 mW/°C for
> 29°C.
T
CASE
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
5
0
0.5 1.0 2.0 4.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
6.0 8.0 12.0
5
0
0.5 1.0 2.0 4.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
6.0 8.0 12.0
5-64
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