HP ATF-25570 Datasheet
0.5 – 10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
Features
• High Output Power:
20.5 dBm Typical P
• Low Noise Figure:
1.0 dB Typical at 4 GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
at 4␣ GHz
1 dB
Description
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high reliabil-
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
G
P
G
g
I
DSS
V
A
1 dB
1 dB
m
P
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 4.0 GHz dB 1.0 1.3
O
Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 4.0 GHz dB 13.0 14.0
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 20.5
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS =5 V, IDS =50 mA f = 4.0 GHz dB 13.0
Transconductance: VDS =3 V, VGS = 0 V mmho 50 80
Saturated Drain Current: VDS = 3 V, VGS = 0 V m A 50 100 150
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -2.0 -0.8
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
= 25° C
A
70 mil Package
f = 6.0 GHz 1.2
f = 8.0 GHz 1.4
f = 6.0 GHz 11.0
f = 8.0 GHz 8.5
5965-8711E
5-60
ATF-25570 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 300°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 450
Channel Temperature °C 175
Storage Temperature °C -65 to +175
= 150°C
CH
[4]
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 3.3 mW/°C for
> 40°C.
T
CASE
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
ATF-25570 Typical Performance, T
25
20
15
10
GAIN (dB)
5
0
0.5 1.0 2.0 4.0
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
MSG
2
|S21|
FREQUENCY (GHz)
MAG
6.0 8.0 12.0
25
20
15
10
GAIN (dB)
5
0
0.5 1.0 2.0 4.0
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
= 25° C
A
FREQUENCY (GHz)
|S21|
MSG
MAG
2
6.0 8.0 12.0
5-61
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