HP ATF-13100-GP3 Datasheet

2–18 GHz Low Noise
Gallium Arsenide FET

Technical Data

ATF-13100

Features

• Low Noise Figure:

1.1 dB Typical at 12 GHz

• High Associated Gain:

9.5 dB Typical at 12 GHz

• High Output Power:

17.5 dBm Typical P

at 12 GHz

1 dB

Description

The ATF-13100 is a high perfor­mance gallium arsenide Schottky­barrier-gate field effect transistor
chip. This device is designed for
use in low noise, wideband
amplifier and oscillator applica­tions in the 2-18␣ GHz frequency
range.

Electrical Specifications, T

Symbol Parameters and Test Conditions

NF

G

P

G

g

m

I

DSS

V

A

1 dB

1 dB

P

Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 0.8

O

Gain @ NFO; VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 12.0

Power Output @ 1 dB Gain Compression f = 12.0 GHz dB m 17.5
VDS = 4 V, IDS = 40 mA

1 dB Compressed Gain; VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5

Transconductance: VDS = 2.5 V, VGS = 0 V mmho 30 55

Saturated Drain Current; VDS = 2.5 V, VGS = 0 V mA 40 50 90

Pinchoff Voltage: VDS = 2.5 V, IDS = 1 mA V -3.0 -1.5 -0.8

This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.

The recommended mounting
procedure is to die attach at a

stage temperature of 300° C using

a gold-tin preform under forming
gas. Assembly can be preformed
with either wedge or ball bonding
using 0.7 mil gold wire. See also
“Chip Use” in the APPLICATIONS
section.

= 25° C

A

Chip Outline

D

SS

G

[1]

f = 12.0 GHz dB 1.1 1.2
f = 15.0 GHz dB 1.5

f = 12.0 GHz dB 9.0 9.5
f = 15.0 GHz dB 8.0

Units Min. Typ. Max.

Note:

1.

RF performance is determined by assembling and testing 10 samples per wafer

5-33

.

5965-8694E

ATF-13100 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -6
Drain Current mA I
Power Dissipation

[2,3]

m W 225

DSS

Channel Temperature °C 175
Storage Temperature °C -65 to +175

Thermal Resistance: θjc = 250°C/W; TCH = 150°C
Liquid Crystal Measurement: 1 µm Spot Size

[4]

Part Number Ordering Information

Part Number Devices Per Tray

ATF-13100-GP3 50

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

MOUNTING SURFACE

= 25°C.

3. Derate at 4 mW/°C for

T

MOUNTING SURFACE

> 119°C.

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-13100 Noise Parameters: V

Freq. NF

GHz dB

O

Mag Ang

= 2.5 V, IDS = 20 mA

DS

Γ

opt

4.0 0.4 0.60 30 0.32

6.0 0.7 0.32 68 0.21

8.0 0.8 0.25 102 0.15

12.0 1.1 0.23 -165 0.09

16.0 1.5 0.32 -112 0.21

ATF-13100 Typical Performance, T

2.0

G

1.5

(dB)

1.0

O

NF

NF

0.5

0

2.0 6.04.0 8.0 10.0 12.0 16.0

Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.

A

O

FREQUENCY (GHz)

20

15

10

(dB)

A

G

5

0

= 25° C

A

4.0

3.0

(dB)

O

2.0

NF

1.0
010520302515 35

Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2.5V, f = 12.0 GHz.

NF

IDS (mA)

G

A

DS.

O

RN/50

12

10

(dB)

A

G

8

6

5-34