HP ATF-10736-TR1, ATF-10736-STR Datasheet
5-29
0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• Low Bias:
VDS = 2 V, I
DS
= 25␣ mA
• High Output Power:
20.0␣ dBm typical P
1 dB
at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
[1]
ATF-10736
36 micro-X PackageDescription
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropriate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, T
A
= 25° C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.9
f = 4.0 GHz dB 1.2 1.4
f = 6.0 GHz dB 1.4
G
A
Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 10.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
VDS = 4 V, IDS = 70 mA
G
1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0
g
m
Transconductance: VDS = 2 V, VGS = 0 V mmho 70 140
I
DSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180
V
P
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -4.0 -1.3 -0.5
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8698E
5-30
ATF-10736 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
DS
Drain-Source Voltage V +5
V
GS
Gate-Source Voltage V -4
V
GD
Gate-Drain Voltage V -7
I
DS
Drain Current mA I
DSS
P
T
Total Power Dissipation
[2,3]
mW 430
T
CH
Channel Temperature °C 175
T
STG
Storage Temperature
[4]
°C -65 to +175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25° C.
3. Derate at 2.9 mW/° C for
T
CASE
> 25°C.
4. Storage above +150° C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-10736-TR1 1000 7"
ATF-10736-STR 10 STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10736 Typical Performance, T
A
= 25° C
Thermal Resistance: θjc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement: 1µm Spot Size
[5]
ATF-10736 Noise Parameters: V
DS
= 2 V, IDS = 25 mA
Freq. NF
O
Γ
opt
GHz dB
Mag Ang
RN/50
1.0 0.8 0.88 41 0.52
2.0 0.9 0.75 85 0.27
4.0 1.2 0.48 159 0.08
6.0 1.4 0.46 -122 0.08
8.0 1.7 0.53 -71 0.43
FREQUENCY (GHz)
NF
O
(dB)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
FREQUENCY (GHz)
GAIN (dB)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
2.0 6.04.0 8.0 10.0 12.0
G
A
NF
O
|S21|
2
MSG
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, IDS = 25 mA.
FREQUENCY (GHz)
GAIN (dB)
|S21|
2
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
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