HP ATF-10236-TR1, ATF-10236-STR Datasheet

0.5 – 12 GHz Low Noise
Gallium Arsenide FET

Technical Data

ATF-10236

Features

• Low Noise Figure:

0.8␣ dB Typical at 4␣ GHz

• Low Bias:

V

= 2 V, I

DS

= 20␣ mA

DS

• High Associated Gain:

13.0␣ dB Typical at 4␣ GHz

• High Output Power: 20.0␣ dBm
Typical P

at 4␣ GHz

1dB

• Cost Effective Ceramic
Microstrip Package

• Tape-And-Reel Packaging
Option Available

[1]

Electrical Specifications, T

The ATF-10236 is a high performance
gallium arsenide Schottky-barrier­gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12␣ GHz frequency
range.

This GaAs FET device has a nominal

0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.

= 25° C

A

36 micro-X PackageDescription

Symbol Parameters and Test Conditions Units Min. Typ. Max.

NF

Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.6

O

f = 4.0 GHz dB 0.8 1.0
f = 6.0 GHz dB 1.0

G

A

Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 16.5

f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 10.5

P

1 dB

Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
VDS = 4 V, IDS = 70 mA

G

1 dB

g

m

I

DSS

V

P

Note:

1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0

Transconductance: VDS = 2 V, VGS = 0 V mmho 80 140

Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180

Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -3.0 -1.3 -0.8

5965-8697E

5-26

ATF-10236 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -7
Drain Current mA I
Power Dissipation

[2,3]

m W 430

Channel Temperature °C 175

Storage Temperature

[4]

°C 175

Thermal Resistance: θjc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement: 1µm Spot Size

[5]

[1]

DSS

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

ATF-10236-TR1 1000 7"

ATF-10236-STR 10 STRIP

For more information, see “Tape and Reel Packaging for Semiconductor Devices.”

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25°C.

3. Derate at 2.9 mW/° C for

> 25°C.

T

CASE

4. Storage above +150° C may tarnish

the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely

stored up to 175°C.

5. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-10236 Noise Parameters: V

Freq. NF

GHz dB

O

Mag Ang

= 2 V, IDS = 25 mA

DS

Γ

0.5 0.45 0.93 18 0.75

1.0 0.5 0.87 36 0.63

2.0 0.6 0.73 74 0.33

4.0 0.8 0.45 148 0.15

6.0 1.0 0.42 -137 0.12

8.0 1.3 0.49 -80 0.45

ATF-10236 Typical Performance, T

18

15

G

2.0

1.5

(dB)

1.0

O

NF

0.5

NF

O

0

2.0 6.04.0 8.0 10.0 12.0
FREQUENCY (GHz)

A

Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.

12

(dB)

A

G

9

6

1.5

1.0

(dB)

O

0.5

NF

0

02010 40 5030 60

Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2V, f = 4.0 GHz.

opt

= 25° C

A

G

A

NF

O

IDS (mA)

DS.

RN/50

16

14

12

10

30

25

(dB)

A

G

20

15

GAIN (dB)

10

5

0

0.5 1.0 2.0 4.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.

MAG

6.0 8.0 12.0

5-27